Evaluation of lateral Ni diffusion in Si nanowire Schottky contact

H. Kamimura, H. Arai, S. Sato, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, Takeo Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


Lateral Ni diffusion in Si Nanowire (SiNW) to form NiSi Schottky contact was characterized by scanning electron microscope at temperatures range from 400 to 700 °C Higher temperature annealing results in longer NiSi formation and the length of NiSi increases with the annealing time. The activation energy for NiSi formation on SiNWs are found to be 0.9 eV which is lower than that on bulk case. One-dimensional diffusion of Ni with SiNW might be the reason for lowering the activation energy.

Original languageEnglish
Title of host publicationECS Transactions - ISTC/CSTIC 2009 (CISTC)
Number of pages5
Edition1 PART 1
Publication statusPublished - 2009
EventISTC/CSTIC 2009 (CISTC) - Shanghai, China
Duration: 2009 Mar 192009 Mar 20

Publication series

NameECS Transactions
Number1 PART 1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737



ASJC Scopus subject areas

  • Engineering(all)

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    Kamimura, H., Arai, H., Sato, S., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2009). Evaluation of lateral Ni diffusion in Si nanowire Schottky contact. In ECS Transactions - ISTC/CSTIC 2009 (CISTC) (1 PART 1 ed., pp. 71-75). (ECS Transactions; Vol. 18, No. 1 PART 1). https://doi.org/10.1149/1.3096430