Evaluation of junction parameters with control of carrier concentration in Bi2Sr2CaCu2O 8+δ stacked junctions

K. Inomata, S. Sato, Koji Nakajima, S. J. Kim, T. Hatano, Y. Takano, M. Nagao, T. Yamashita

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The control of the critical current density (JC) and the junction resistance (RN) along the c axis of intrinsic Josephson junctions (IJJs) on a high-TC superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of JC, RN, and the carrier concentration in Bi2Sr2CaCu 2O8+δ whiskers by changing the carrier concentration with an annealing process. We determined the electrical transport characteristics of the IJJs. As a result, the JC increased, and the RN decreased systematically when the carrier concentration increased. The values of JC and RN could be controlled by a change in the carrier concentration.

Original languageEnglish
Pages (from-to)1396-1400
Number of pages5
JournalPhysica C: Superconductivity and its applications
Issue numberSPEC. ISS.
Publication statusPublished - 2004 Oct 1


  • Carrier concentration
  • Intrinsic Josephson junctions
  • Whisker

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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