Evaluation of interfacial state density of MOS capacitor with three-dimensional channel by conductance method

W. Li; K. Nakajima; C. Dou; K. Kakushima; P. Ahmet; A. Nishiyama; N. Sugii; K. Tsutsui; Y. Kataoka; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3694459

Evaluation of interfacial state density of MOS capacitor with three-dimensional channel by conductance method

W. Li, K. Nakajima, C. Dou, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, Y. Kataoka, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An investigation of interface state density of a MOS capacitor with three-dimensional Si surface has been conducted by conductance method. Through comparison with planar devices with (100) and (110) oriented surfaces, the conductance spectra of the 3D surfaces have been explained.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2012, CSTIC 2012
Pages	1275-1279
Number of pages	5
Edition	1
DOIs	https://doi.org/10.1149/1.3694459
Publication status	Published - 2012
Externally published	Yes
Event	China Semiconductor Technology International Conference 2012, CSTIC 2012 - Shanghai, China Duration: 2012 Mar 18 → 2012 Mar 19

Publication series

Name	ECS Transactions
Number	1
Volume	44
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	China Semiconductor Technology International Conference 2012, CSTIC 2012
Country/Territory	China
City	Shanghai
Period	12/3/18 → 12/3/19

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3694459

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Li, W., Nakajima, K., Dou, C., Kakushima, K., Ahmet, P., Nishiyama, A., Sugii, N., Tsutsui, K., Kataoka, Y., Natori, K., Hattori, T., & Iwai, H. (2012). Evaluation of interfacial state density of MOS capacitor with three-dimensional channel by conductance method. In China Semiconductor Technology International Conference 2012, CSTIC 2012 (1 ed., pp. 1275-1279). (ECS Transactions; Vol. 44, No. 1). https://doi.org/10.1149/1.3694459

Evaluation of interfacial state density of MOS capacitor with three-dimensional channel by conductance method. / Li, W.; Nakajima, K.; Dou, C.; Kakushima, K.; Ahmet, P.; Nishiyama, A.; Sugii, N.; Tsutsui, K.; Kataoka, Y.; Natori, K.; Hattori, T.; Iwai, H.

China Semiconductor Technology International Conference 2012, CSTIC 2012. 1. ed. 2012. p. 1275-1279 (ECS Transactions; Vol. 44, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Li, W, Nakajima, K, Dou, C, Kakushima, K, Ahmet, P, Nishiyama, A, Sugii, N, Tsutsui, K, Kataoka, Y, Natori, K, Hattori, T & Iwai, H 2012, Evaluation of interfacial state density of MOS capacitor with three-dimensional channel by conductance method. in China Semiconductor Technology International Conference 2012, CSTIC 2012. 1 edn, ECS Transactions, no. 1, vol. 44, pp. 1275-1279, China Semiconductor Technology International Conference 2012, CSTIC 2012, Shanghai, China, 12/3/18. https://doi.org/10.1149/1.3694459

Li, W. ; Nakajima, K. ; Dou, C. ; Kakushima, K. ; Ahmet, P. ; Nishiyama, A. ; Sugii, N. ; Tsutsui, K. ; Kataoka, Y. ; Natori, K. ; Hattori, T. ; Iwai, H. / Evaluation of interfacial state density of MOS capacitor with three-dimensional channel by conductance method. China Semiconductor Technology International Conference 2012, CSTIC 2012. 1. ed. 2012. pp. 1275-1279 (ECS Transactions; 1).

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abstract = "An investigation of interface state density of a MOS capacitor with three-dimensional Si surface has been conducted by conductance method. Through comparison with planar devices with (100) and (110) oriented surfaces, the conductance spectra of the 3D surfaces have been explained.",

author = "W. Li and K. Nakajima and C. Dou and K. Kakushima and P. Ahmet and A. Nishiyama and N. Sugii and K. Tsutsui and Y. Kataoka and K. Natori and T. Hattori and H. Iwai",

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Evaluation of interfacial state density of MOS capacitor with three-dimensional channel by conductance method

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