@inproceedings{2c932d08e6154b3681064839ad62770c,
title = "Evaluation of interfacial state density of MOS capacitor with three-dimensional channel by conductance method",
abstract = "An investigation of interface state density of a MOS capacitor with three-dimensional Si surface has been conducted by conductance method. Through comparison with planar devices with (100) and (110) oriented surfaces, the conductance spectra of the 3D surfaces have been explained.",
author = "W. Li and K. Nakajima and C. Dou and K. Kakushima and P. Ahmet and A. Nishiyama and N. Sugii and K. Tsutsui and Y. Kataoka and K. Natori and T. Hattori and H. Iwai",
year = "2012",
doi = "10.1149/1.3694459",
language = "English",
isbn = "9781607683186",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "1275--1279",
booktitle = "China Semiconductor Technology International Conference 2012, CSTIC 2012",
edition = "1",
note = "China Semiconductor Technology International Conference 2012, CSTIC 2012 ; Conference date: 18-03-2012 Through 19-03-2012",
}