Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs

Toshiaki Tsuchiya; Yuji Imada; Junichi Murota

doi:10.1109/ESSDERC.2002.194914

Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs

Toshiaki Tsuchiya, Yuji Imada, Junichi Murota

Research Institute of Electrical Communication (RIEC)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

Interface trap density in a SiGe/Si heterostructure is successfully measured for the first time using a lowtemperature charge pumping technique in a SiGechannel pMOSFET, without interference from the interface traps between the gate oxide and the semiconductor surface. Moreover, low frequency noise in the SiGe pMOSFETs is measured to investigate any correlation with the trap density observed at SiGe/Si interface, and a good correlation between the measured interface trap density in the heterostructure and the low frequency noise level in the current flowing in the SiGechannel is obtained.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	Elena Gnani, Giorgio Baccarani, Massimo Rudan
Publisher	IEEE Computer Society
Pages	239-242
Number of pages	4
ISBN (Electronic)	8890084782
DOIs	https://doi.org/10.1109/ESSDERC.2002.194914
Publication status	Published - 2002
Event	32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy Duration: 2002 Sep 24 → 2002 Sep 26

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	32nd European Solid-State Device Research Conference, ESSDERC 2002
Country	Italy
City	Firenze
Period	02/9/24 → 02/9/26

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/ESSDERC.2002.194914

Fingerprint Dive into the research topics of 'Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs'. Together they form a unique fingerprint.

Cite this

Tsuchiya, T., Imada, Y., & Murota, J. (2002). Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs. In E. Gnani, G. Baccarani, & M. Rudan (Eds.), European Solid-State Device Research Conference (pp. 239-242). (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2002.194914

Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs. / Tsuchiya, Toshiaki; Imada, Yuji; Murota, Junichi.

European Solid-State Device Research Conference. ed. / Elena Gnani; Giorgio Baccarani; Massimo Rudan. IEEE Computer Society, 2002. p. 239-242 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsuchiya, T, Imada, Y & Murota, J 2002, Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs. in E Gnani, G Baccarani & M Rudan (eds), European Solid-State Device Research Conference. European Solid-State Device Research Conference, IEEE Computer Society, pp. 239-242, 32nd European Solid-State Device Research Conference, ESSDERC 2002, Firenze, Italy, 02/9/24. https://doi.org/10.1109/ESSDERC.2002.194914

Tsuchiya T, Imada Y, Murota J. Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs. In Gnani E, Baccarani G, Rudan M, editors, European Solid-State Device Research Conference. IEEE Computer Society. 2002. p. 239-242. (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2002.194914

Tsuchiya, Toshiaki ; Imada, Yuji ; Murota, Junichi. / Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs. European Solid-State Device Research Conference. editor / Elena Gnani ; Giorgio Baccarani ; Massimo Rudan. IEEE Computer Society, 2002. pp. 239-242 (European Solid-State Device Research Conference).

@inproceedings{70674f42223c4ec0aa9d606444c4c2b4,

title = "Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs",

abstract = "Interface trap density in a SiGe/Si heterostructure is successfully measured for the first time using a lowtemperature charge pumping technique in a SiGechannel pMOSFET, without interference from the interface traps between the gate oxide and the semiconductor surface. Moreover, low frequency noise in the SiGe pMOSFETs is measured to investigate any correlation with the trap density observed at SiGe/Si interface, and a good correlation between the measured interface trap density in the heterostructure and the low frequency noise level in the current flowing in the SiGechannel is obtained.",

author = "Toshiaki Tsuchiya and Yuji Imada and Junichi Murota",

year = "2002",

doi = "10.1109/ESSDERC.2002.194914",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "239--242",

editor = "Elena Gnani and Giorgio Baccarani and Massimo Rudan",

booktitle = "European Solid-State Device Research Conference",

note = "32nd European Solid-State Device Research Conference, ESSDERC 2002 ; Conference date: 24-09-2002 Through 26-09-2002",

}

TY - GEN

T1 - Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs

AU - Tsuchiya, Toshiaki

AU - Imada, Yuji

AU - Murota, Junichi

PY - 2002

Y1 - 2002

N2 - Interface trap density in a SiGe/Si heterostructure is successfully measured for the first time using a lowtemperature charge pumping technique in a SiGechannel pMOSFET, without interference from the interface traps between the gate oxide and the semiconductor surface. Moreover, low frequency noise in the SiGe pMOSFETs is measured to investigate any correlation with the trap density observed at SiGe/Si interface, and a good correlation between the measured interface trap density in the heterostructure and the low frequency noise level in the current flowing in the SiGechannel is obtained.

AB - Interface trap density in a SiGe/Si heterostructure is successfully measured for the first time using a lowtemperature charge pumping technique in a SiGechannel pMOSFET, without interference from the interface traps between the gate oxide and the semiconductor surface. Moreover, low frequency noise in the SiGe pMOSFETs is measured to investigate any correlation with the trap density observed at SiGe/Si interface, and a good correlation between the measured interface trap density in the heterostructure and the low frequency noise level in the current flowing in the SiGechannel is obtained.

UR - http://www.scopus.com/inward/record.url?scp=84907700888&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907700888&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2002.194914

DO - 10.1109/ESSDERC.2002.194914

M3 - Conference contribution

AN - SCOPUS:84907700888

T3 - European Solid-State Device Research Conference

SP - 239

EP - 242

BT - European Solid-State Device Research Conference

A2 - Gnani, Elena

A2 - Baccarani, Giorgio

A2 - Rudan, Massimo

PB - IEEE Computer Society

T2 - 32nd European Solid-State Device Research Conference, ESSDERC 2002

Y2 - 24 September 2002 through 26 September 2002

ER -

Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this