TY - GEN
T1 - Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs
AU - Tsuchiya, Toshiaki
AU - Imada, Yuji
AU - Murota, Junichi
PY - 2002
Y1 - 2002
N2 - Interface trap density in a SiGe/Si heterostructure is successfully measured for the first time using a lowtemperature charge pumping technique in a SiGechannel pMOSFET, without interference from the interface traps between the gate oxide and the semiconductor surface. Moreover, low frequency noise in the SiGe pMOSFETs is measured to investigate any correlation with the trap density observed at SiGe/Si interface, and a good correlation between the measured interface trap density in the heterostructure and the low frequency noise level in the current flowing in the SiGechannel is obtained.
AB - Interface trap density in a SiGe/Si heterostructure is successfully measured for the first time using a lowtemperature charge pumping technique in a SiGechannel pMOSFET, without interference from the interface traps between the gate oxide and the semiconductor surface. Moreover, low frequency noise in the SiGe pMOSFETs is measured to investigate any correlation with the trap density observed at SiGe/Si interface, and a good correlation between the measured interface trap density in the heterostructure and the low frequency noise level in the current flowing in the SiGechannel is obtained.
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U2 - 10.1109/ESSDERC.2002.194914
DO - 10.1109/ESSDERC.2002.194914
M3 - Conference contribution
AN - SCOPUS:84907700888
T3 - European Solid-State Device Research Conference
SP - 239
EP - 242
BT - European Solid-State Device Research Conference
A2 - Gnani, Elena
A2 - Baccarani, Giorgio
A2 - Rudan, Massimo
PB - IEEE Computer Society
T2 - 32nd European Solid-State Device Research Conference, ESSDERC 2002
Y2 - 24 September 2002 through 26 September 2002
ER -