Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs

Toshiaki Tsuchiya, Yuji Imada, Junichi Murota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Interface trap density in a SiGe/Si heterostructure is successfully measured for the first time using a lowtemperature charge pumping technique in a SiGechannel pMOSFET, without interference from the interface traps between the gate oxide and the semiconductor surface. Moreover, low frequency noise in the SiGe pMOSFETs is measured to investigate any correlation with the trap density observed at SiGe/Si interface, and a good correlation between the measured interface trap density in the heterostructure and the low frequency noise level in the current flowing in the SiGechannel is obtained.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsElena Gnani, Giorgio Baccarani, Massimo Rudan
PublisherIEEE Computer Society
Pages239-242
Number of pages4
ISBN (Electronic)8890084782
DOIs
Publication statusPublished - 2002
Event32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy
Duration: 2002 Sep 242002 Sep 26

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other32nd European Solid-State Device Research Conference, ESSDERC 2002
CountryItaly
CityFirenze
Period02/9/2402/9/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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