Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs

Toshiaki Tsuchiya; Yuji Imada; Junichi Murota

doi:10.1109/ESSDERC.2002.194914

Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs

Toshiaki Tsuchiya, Yuji Imada, Junichi Murota

Research Institute of Electrical Communication (RIEC)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

Interface trap density in a SiGe/Si heterostructure is successfully measured for the first time using a lowtemperature charge pumping technique in a SiGechannel pMOSFET, without interference from the interface traps between the gate oxide and the semiconductor surface. Moreover, low frequency noise in the SiGe pMOSFETs is measured to investigate any correlation with the trap density observed at SiGe/Si interface, and a good correlation between the measured interface trap density in the heterostructure and the low frequency noise level in the current flowing in the SiGechannel is obtained.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	Elena Gnani, Giorgio Baccarani, Massimo Rudan
Publisher	IEEE Computer Society
Pages	239-242
Number of pages	4
ISBN (Electronic)	8890084782
DOIs	https://doi.org/10.1109/ESSDERC.2002.194914
Publication status	Published - 2002
Event	32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy Duration: 2002 Sep 24 → 2002 Sep 26

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	32nd European Solid-State Device Research Conference, ESSDERC 2002
Country/Territory	Italy
City	Firenze
Period	02/9/24 → 02/9/26

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/ESSDERC.2002.194914

Cite this

Tsuchiya, T., Imada, Y., & Murota, J. (2002). Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs. In E. Gnani, G. Baccarani, & M. Rudan (Eds.), European Solid-State Device Research Conference (pp. 239-242). (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2002.194914

Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs. / Tsuchiya, Toshiaki; Imada, Yuji; Murota, Junichi.

European Solid-State Device Research Conference. ed. / Elena Gnani; Giorgio Baccarani; Massimo Rudan. IEEE Computer Society, 2002. p. 239-242 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsuchiya, T, Imada, Y & Murota, J 2002, Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs. in E Gnani, G Baccarani & M Rudan (eds), European Solid-State Device Research Conference. European Solid-State Device Research Conference, IEEE Computer Society, pp. 239-242, 32nd European Solid-State Device Research Conference, ESSDERC 2002, Firenze, Italy, 02/9/24. https://doi.org/10.1109/ESSDERC.2002.194914

Tsuchiya T, Imada Y, Murota J. Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs. In Gnani E, Baccarani G, Rudan M, editors, European Solid-State Device Research Conference. IEEE Computer Society. 2002. p. 239-242. (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2002.194914

Tsuchiya, Toshiaki ; Imada, Yuji ; Murota, Junichi. / Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs. European Solid-State Device Research Conference. editor / Elena Gnani ; Giorgio Baccarani ; Massimo Rudan. IEEE Computer Society, 2002. pp. 239-242 (European Solid-State Device Research Conference).

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abstract = "Interface trap density in a SiGe/Si heterostructure is successfully measured for the first time using a lowtemperature charge pumping technique in a SiGechannel pMOSFET, without interference from the interface traps between the gate oxide and the semiconductor surface. Moreover, low frequency noise in the SiGe pMOSFETs is measured to investigate any correlation with the trap density observed at SiGe/Si interface, and a good correlation between the measured interface trap density in the heterostructure and the low frequency noise level in the current flowing in the SiGechannel is obtained.",

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AB - Interface trap density in a SiGe/Si heterostructure is successfully measured for the first time using a lowtemperature charge pumping technique in a SiGechannel pMOSFET, without interference from the interface traps between the gate oxide and the semiconductor surface. Moreover, low frequency noise in the SiGe pMOSFETs is measured to investigate any correlation with the trap density observed at SiGe/Si interface, and a good correlation between the measured interface trap density in the heterostructure and the low frequency noise level in the current flowing in the SiGechannel is obtained.

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Evaluation of interface trap density in a SiGe/Si heterostructure using a charge pumping technique and correlation between the trap density and low frequency noise in SiGe-channel pMOSFETs

Abstract

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