Evaluation of hydrogenation effect in Poly-Si TFT with charge pumping method

K. Hata, Y. Baba, H. Mori, I. Wei Wu, A. G. Lewis, M. Koyanagi

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

The hydrogenation effect in Poly-Si TFT was evaluated by using the charge pumping method for the first time. The generation-recombination current through the grain boundary traps is measured as the charge pumping current. Consequently, the grain boundary trap properties could be directly evaluated. It was found that the grain boundary trap density is reduced to around one fourth by the hydrogenation treatment for 8 hours in poly-Si TFTs fabricated by the high temperature process. The grain boundary traps have the tendency of increasing densities approaching the energy band edge. In poly-Si TFTs fabricated by the low temperature process, a considerably high trap density still remained even after 8 hour hydrogenation treatment.

Original languageEnglish
Pages593-595
Number of pages3
Publication statusPublished - 1991 Jan 1
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Evaluation of hydrogenation effect in Poly-Si TFT with charge pumping method'. Together they form a unique fingerprint.

Cite this