Evaluation of grain-boundary conduction of dense AlN-SiC solid solution by scanning nonlinear dielectric microscopy

Ryota Kobayashi, Junichi Tatami, Toru Wakihara, Katsutoshi Komeya, Takeshi Meguro, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Dense and elemental homogeneous 2H AlN-SiC solid solution doped with Al and C was fabricated by using spark plasma sintering. The p-type electrical conduction of the sample was confirmed by measurements of electrical conductivities and Seebeck coefficient. Dopant profiling of the sample by scanning nonlinear dielectric microscopy showed that the AlN-SiC grains respond to p-type electrical conduction. These results indicated that added Al and C were dissolved to the grains and acted as p-type dopants. In contrast, the grain boundaries did not show any response, suggesting the presence of depletion layer in the boundary.

Original languageEnglish
Pages (from-to)4026-4029
Number of pages4
JournalJournal of the American Ceramic Society
Volume93
Issue number12
DOIs
Publication statusPublished - 2010 Dec 1

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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