Abstract
The evaluation of GaAs (001) surface by X-ray double crystal diffraction is presented. We have examined the sensitivity of full width at half maximum (FWHM) of X-ray rocking curve to the surface conditions of GaAs wafers at various kind of reflection planes. It is concluded that the use of the (1̄13) reflection at low incidence angle to the GaAs (001) surface is suitable for surface evaluation. Surface damage, roughness, off-orientation and lattice curvature affect FWHM, although it is demonstrated that these factors can be separated by sample preparation and lattice curvature radius measurement. We have applied this method to the evaluation of GaAs surface which underwent manufacturing processes.
| Original language | English |
|---|---|
| Pages (from-to) | 91-114 |
| Number of pages | 24 |
| Journal | Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory |
| Volume | 53 |
| Issue number | 3 |
| Publication status | Published - 1989 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering