Evaluation of dislocation mobility in wurtzite semiconductors

Ichiro Yonenaga

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

The indentation hardness and yield strength of various wurtzite-structured semiconductors, such as A1N, GaN, InN, and ZnO, were summarized together with those of 6H-SiC. From analysis of the data, the activation energy for motion of an individual dislocation was deduced to be 2-2.7 and 0.7-1.2 eV in GaN and ZnO, respectively, and the evaluated activation energy for dislocation motion showed a dependence on the dislocation energy in the minimum length. The results were evaluated in terms of homology and the basic mechanism of the dislocation process. Dislocation motion is thought to be primarily controlled by the atomic bonding character of the semiconductors.

Original languageEnglish
Pages (from-to)21-28
Number of pages8
JournalMaterials Research Society Symposium Proceedings
Volume1741
Issue numberJanuary
DOIs
Publication statusPublished - 2015
Event2014 MRS Fall Meeting - Boston, United States
Duration: 2014 Nov 302014 Dec 5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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