A current-modulating four-point-probe method (CMR) is proposed as a method to determine the conversion efficiency of crystalline Si solar cells. This technique was implemented based on the comprehensive consideration of multiple problems or factors that are present in crystalline Si wafers and the subsequent thermal processes during solar cell fabrication, rather than employ conventional lifetime mapping or diffusion length mapping. A single parameter measurement of Ith-Is from the CMR method reflects the effective resistivity or minority carriers of an entire wafer, to quickly characterize the quality or conversion efficiency of all kinds of crystalline Si.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)