In this paper, we compare 1/f noise characteristics of High-κ/Metal Gate MOSFET and SiON/Poly-Si Gate MOSFET experimentally, and evaluate the time fluctuation of drive current. These MOSFETs are fabricated with 65 nm CMOS process, and their gate lengths (Lg) are 130 nm. Specifically, we focus on the dependency of the time fluctuation of drive current on channel width (W) and temperature (T). First, we evaluate the dependency on channel width. In the case of SiON/Poly-Si Gate MOSFET, when the channel width is narrow such as W=200 nm and W=250 nm, Power Spectrum Density (PSD) depends on 1/f2 at two frequency regions. Moreover, as the channel width is wide such as W=300 nm, W=500 nm and W=1000 nm, PSD depends on 1/f and the value of PSD shifts lower. This is a new phenomena observed for the first time. On the other hand, in the case of High-κ/Metal Gate MOSFET, the value of PSD is about 100 times larger than that of SiON/Poly- Si Gate MOSFET. Moreover, there is no dependency of PSD on channel width ranges from 150 nm to 1000 nm. Second, we evaluate the dependency on temperature. In the case of SiON/Poly-Si Gate MOSFET, when the temperature (T) is lowered from T=27°C to T=-35°C, the dependency changes from the 1/f dependency to the 1/f2 dependency at two different frequency regions. This is also a new phenomena observed for the first time. However, in the case of High-κ/Metal Gate MOSFET, there is no dependency of PSD on temperature ranges from 27°C to -35°C. These results are useful knowledge for designing future LSI, because PSD dependency shows different characteristics when both channel width and temperature are changed.
- 1/f noise
- Flicker noise
- Random Telegraph Signal (RTS)
- SiON/Poly-Si Gate
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering