Evaluation method of TiO 2-SiO 2 ultra-low-expansion glasses with periodic striae using the LFB ultrasonic material characterization system

Jun Ichi Kushibiki, Mototaka Arakawa, Yuji Ohashi, Kouji Suzuki

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Experimental procedures and standard specimens for characterizing and evaluating TiO 2-SiO 2 ultralow expansion glasses with periodic striae using the line-focus-beam (LFB) ultrasonic material characterization system are discussed. Two types of specimens were prepared, with specimen surfaces parallel and perpendicular to the striae plane using two different grades of glass ingots. The inhomogeneities of each of the specimens were evaluated at 225 MHz. It was clarified that parallel specimens are useful for accurately measuring velocity variations of leaky surface acoustic waves (LSAWs) excited on a water-loaded specimen surface associated with the striae. Perpendicular specimens are useful for obtaining periodicities in the striae for LSAW propagation perpendicular to the striae plane on a surface and for precisely measuring averaged velocities for LSAW propagation parallel to the striae plane. The standard velocity of Rayleigh-type LSAWs traveling parallel to the striae plane for the perpendicular specimens was numerically calculated using the measured velocities of longitudinal and shear waves and density. Consequently, a reliable standard specimen with an LSAW velocity of 3308.18 ± 0.35 m/s at 23°C and its temperature coefficient of 0.39 (m/s)/°C was obtained for a TiO 2-SiO 2 glass with a TiO 2 concentration of 7.09 wt%. A basis for the striae analysis using this ultrasonic method was established.

Original languageEnglish
Article number1678191
Pages (from-to)1627-1636
Number of pages10
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume53
Issue number9
DOIs
Publication statusPublished - 2006 Sep 1

ASJC Scopus subject areas

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering

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