Evaluating work-function and composition of ErSix on various surface orientation of silicon

Akinobu Teramoto; Hiroaki Tanaka; Tomoyuki Suwa; Tetsuya Goto; Rihito Kuroda; Tsukasa Motoya; Kazumasa Kawase; Shigetoshi Sugawa

doi:10.1149/2.0221610jss

Evaluating work-function and composition of ErSix on various surface orientation of silicon

Akinobu Teramoto, Hiroaki Tanaka, Tomoyuki Suwa, Tetsuya Goto, Rihito Kuroda, Tsukasa Motoya, Kazumasa Kawase, Shigetoshi Sugawa

Research output: Contribution to journal › Article › peer-review

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Abstract

The work function of ErSiX on different surface orientation of Si was evaluated. ErSiX was formed by suppressing of the oxidation during the Si surface cleaning, Er sputtering, and silicidation annealing. Almost ideal Schottky diode properties are obtained on every surface orientation. The work function of ErSiX depends on the surface orientation and deposited Er thickness. The work function of ErSiX on Si(100) decreases and that on Si(551) increases with the increasing Er thickness. In addition, the work function ErSiX on Si(111) for the thickness less than 5 nm is constant and very low value of about 0.25 eV. These work function values depend on Si concentration in ErSiX, and it is considered that the concentration difference is caused by the lattice mismatch between ErSi2 and Si surface.

Original language	English
Pages (from-to)	P608-P613
Journal	ECS Journal of Solid State Science and Technology
Volume	5
Issue number	10
DOIs	https://doi.org/10.1149/2.0221610jss
Publication status	Published - 2016

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2.0221610jss

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title = "Evaluating work-function and composition of ErSix on various surface orientation of silicon",

abstract = "The work function of ErSiX on different surface orientation of Si was evaluated. ErSiX was formed by suppressing of the oxidation during the Si surface cleaning, Er sputtering, and silicidation annealing. Almost ideal Schottky diode properties are obtained on every surface orientation. The work function of ErSiX depends on the surface orientation and deposited Er thickness. The work function of ErSiX on Si(100) decreases and that on Si(551) increases with the increasing Er thickness. In addition, the work function ErSiX on Si(111) for the thickness less than 5 nm is constant and very low value of about 0.25 eV. These work function values depend on Si concentration in ErSiX, and it is considered that the concentration difference is caused by the lattice mismatch between ErSi2 and Si surface.",

author = "Akinobu Teramoto and Hiroaki Tanaka and Tomoyuki Suwa and Tetsuya Goto and Rihito Kuroda and Tsukasa Motoya and Kazumasa Kawase and Shigetoshi Sugawa",

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TY - JOUR

T1 - Evaluating work-function and composition of ErSix on various surface orientation of silicon

AU - Teramoto, Akinobu

AU - Tanaka, Hiroaki

AU - Suwa, Tomoyuki

AU - Goto, Tetsuya

AU - Kuroda, Rihito

AU - Motoya, Tsukasa

AU - Kawase, Kazumasa

AU - Sugawa, Shigetoshi

PY - 2016

Y1 - 2016

N2 - The work function of ErSiX on different surface orientation of Si was evaluated. ErSiX was formed by suppressing of the oxidation during the Si surface cleaning, Er sputtering, and silicidation annealing. Almost ideal Schottky diode properties are obtained on every surface orientation. The work function of ErSiX depends on the surface orientation and deposited Er thickness. The work function of ErSiX on Si(100) decreases and that on Si(551) increases with the increasing Er thickness. In addition, the work function ErSiX on Si(111) for the thickness less than 5 nm is constant and very low value of about 0.25 eV. These work function values depend on Si concentration in ErSiX, and it is considered that the concentration difference is caused by the lattice mismatch between ErSi2 and Si surface.

AB - The work function of ErSiX on different surface orientation of Si was evaluated. ErSiX was formed by suppressing of the oxidation during the Si surface cleaning, Er sputtering, and silicidation annealing. Almost ideal Schottky diode properties are obtained on every surface orientation. The work function of ErSiX depends on the surface orientation and deposited Er thickness. The work function of ErSiX on Si(100) decreases and that on Si(551) increases with the increasing Er thickness. In addition, the work function ErSiX on Si(111) for the thickness less than 5 nm is constant and very low value of about 0.25 eV. These work function values depend on Si concentration in ErSiX, and it is considered that the concentration difference is caused by the lattice mismatch between ErSi2 and Si surface.

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JF - ECS Journal of Solid State Science and Technology

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Evaluating work-function and composition of ErSix on various surface orientation of silicon

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