Evaluating work-function and composition of ErSix on various surface orientation of silicon

Akinobu Teramoto, Hiroaki Tanaka, Tomoyuki Suwa, Tetsuya Goto, Rihito Kuroda, Tsukasa Motoya, Kazumasa Kawase, Shigetoshi Sugawa

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The work function of ErSiX on different surface orientation of Si was evaluated. ErSiX was formed by suppressing of the oxidation during the Si surface cleaning, Er sputtering, and silicidation annealing. Almost ideal Schottky diode properties are obtained on every surface orientation. The work function of ErSiX depends on the surface orientation and deposited Er thickness. The work function of ErSiX on Si(100) decreases and that on Si(551) increases with the increasing Er thickness. In addition, the work function ErSiX on Si(111) for the thickness less than 5 nm is constant and very low value of about 0.25 eV. These work function values depend on Si concentration in ErSiX, and it is considered that the concentration difference is caused by the lattice mismatch between ErSi2 and Si surface.

Original languageEnglish
Pages (from-to)P608-P613
JournalECS Journal of Solid State Science and Technology
Volume5
Issue number10
DOIs
Publication statusPublished - 2016 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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