TY - JOUR
T1 - Evaluating work-function and composition of ErSix on various surface orientation of silicon
AU - Teramoto, Akinobu
AU - Tanaka, Hiroaki
AU - Suwa, Tomoyuki
AU - Goto, Tetsuya
AU - Kuroda, Rihito
AU - Motoya, Tsukasa
AU - Kawase, Kazumasa
AU - Sugawa, Shigetoshi
PY - 2016/1/1
Y1 - 2016/1/1
N2 - The work function of ErSiX on different surface orientation of Si was evaluated. ErSiX was formed by suppressing of the oxidation during the Si surface cleaning, Er sputtering, and silicidation annealing. Almost ideal Schottky diode properties are obtained on every surface orientation. The work function of ErSiX depends on the surface orientation and deposited Er thickness. The work function of ErSiX on Si(100) decreases and that on Si(551) increases with the increasing Er thickness. In addition, the work function ErSiX on Si(111) for the thickness less than 5 nm is constant and very low value of about 0.25 eV. These work function values depend on Si concentration in ErSiX, and it is considered that the concentration difference is caused by the lattice mismatch between ErSi2 and Si surface.
AB - The work function of ErSiX on different surface orientation of Si was evaluated. ErSiX was formed by suppressing of the oxidation during the Si surface cleaning, Er sputtering, and silicidation annealing. Almost ideal Schottky diode properties are obtained on every surface orientation. The work function of ErSiX depends on the surface orientation and deposited Er thickness. The work function of ErSiX on Si(100) decreases and that on Si(551) increases with the increasing Er thickness. In addition, the work function ErSiX on Si(111) for the thickness less than 5 nm is constant and very low value of about 0.25 eV. These work function values depend on Si concentration in ErSiX, and it is considered that the concentration difference is caused by the lattice mismatch between ErSi2 and Si surface.
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U2 - 10.1149/2.0221610jss
DO - 10.1149/2.0221610jss
M3 - Article
AN - SCOPUS:84992168413
VL - 5
SP - P608-P613
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 10
ER -