Evaluating the dominant factor for electromigration in high purities Al film deposited by sputtering

Xu Zhao, Masumi Saka, Mitsuo Yamashita, Fumiaki Togoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A way of testing the electromigration (EM) resistance of different high purities Al based on atomic flux divergence (AFD) method has been proposed in our previous work. With the theoretical analysis, the EM resistance has been clarified to depend on various parameters which are related with the material properties such as diffusion coefficient and grain size. The present research compares the EM resistance of different high purities Al films with the same thickness of 5μm. For these films, the grain size, which is realized as a factor affecting the resistance, was changed compared with the 1μm thick samples, which have been used in the previous work. A narrow section was shaped in the film by introducing a double-L shaped slit by using a focused-ion-beam (FIB) system. The samples so fabricated were positioned on a ceramic heater with constant temperature, and a high current density was achieved in the narrow section to cause EM. After experiencing the same time for current supply and confirming having the same local temperature by using chemical reagents having known melting points, the different purities samples were observed with a magnified field emission scanning electron microscopy (FE-SEM). In addition, the comparison of the total hillock volume appeared in the sample with the time for current supply is achieved for the samples. It is known that for a given time, a smaller hillock volume corresponds to a higher resistance of the material against EM. Finally, according with the analysis by the synthesis of the obtained EM ranking for the 1 and 5μm thick films, the evaluation of the dominant factor, diffusion coefficient, for EM in high purities Al film deposited by sputtering was approached.

Original languageEnglish
Title of host publicationProceedings of the ASME InterPack Conference 2009, IPACK2009
Pages397-400
Number of pages4
DOIs
Publication statusPublished - 2010 Jun 25
Event2009 ASME InterPack Conference, IPACK2009 - San Francisco, CA, United States
Duration: 2009 Jul 192009 Jul 23

Publication series

NameProceedings of the ASME InterPack Conference 2009, IPACK2009
Volume1

Other

Other2009 ASME InterPack Conference, IPACK2009
CountryUnited States
CitySan Francisco, CA
Period09/7/1909/7/23

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Zhao, X., Saka, M., Yamashita, M., & Togoh, F. (2010). Evaluating the dominant factor for electromigration in high purities Al film deposited by sputtering. In Proceedings of the ASME InterPack Conference 2009, IPACK2009 (pp. 397-400). (Proceedings of the ASME InterPack Conference 2009, IPACK2009; Vol. 1). https://doi.org/10.1115/InterPACK2009-89282