Etching Gas

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Generally, silicon dioxide (SiO2) etching is performed using fluorocarbon gases to deposit a fluoropolymer on the underlying silicon. This chapter reviews a new method for selective radical generation for high-performance sub-0.1μm SiO2 patterning, using CF3I and C2F4 in an Ultra High Frequency (UHF) plasma. As the feature size of ultra large-scale integrated circuits (ULSIs) becomes smaller, the resistance-capacitance (RC) delay time of their interconnects restricts the circuit performance. Low-damage and highly selective low-k etching could be achieved by using an environmentally harmonized gas chemistry (CF3I) plasma. This is because the CF3I plasma could reduce generating UV photons and F radicals. The etching rate for low-k film is drastically increased by the pulsed CF3I plasma. It is concluded from these results that CF3I gas plasma has a higher potential as the gas chemistry for practical low-k etching.

Original languageEnglish
Title of host publicationIodine Chemistry and Applications
PublisherWiley-Blackwell
Pages523-545
Number of pages23
Volume9781118466292
ISBN (Electronic)9781118909911
ISBN (Print)9781118466292
DOIs
Publication statusPublished - 2014 Nov 24

Keywords

  • Environmentally harmonized gas chemistry (CF3I) plasma
  • Etching gas
  • High-performance silicon dioxide etching
  • Low-k etching

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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