Abstract
The wideband electromagnetic noise radiated from PCB model driven by a switching device is one of the EMI problems. To estimate the noise radiation quantitatively, a switching transistor is modeled by FDTD method by using Ebers-Moll equivalent circuit, and its parameter is determined by simple measurement. And the magnetic near field noise is calculated by FDTD method implemented switching transistor. The calculated result of the switching voltage by FDTD method is corresponded to the SPICE and experimental results. The magnetic near field noise, when the 3 MHz clock pulse is applied to the source, is calculated by FDTD method and measured, and it is realized that the low frequency noise, less than 200 MHz, is large when compared with radiation efficiency S21H. The noise simulation method using the FDTD method implemented the switching transistor can be very useful tool to estimate the noise radiation in the next step.
| Original language | English |
|---|---|
| Pages (from-to) | 727-732 |
| Number of pages | 6 |
| Journal | IEEE International Symposium on Electromagnetic Compatibility |
| Volume | 2 |
| Publication status | Published - 2002 Jan 1 |
| Event | 2002 IEEE International Symposium on Electromagnetic Compatibility - Minneapolis, MN, United States Duration: 2002 Aug 19 → 2002 Aug 23 |
Keywords
- FDTD method
- Magnetic near field noise
- PCB
- Switching Transistor
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering