Estimation on magnetic near field noise from PCB by FDTD implemented non-linear switching transistor

Takashi Kasuga; Motoshi Tanaka; Hiroshi Inoue

Estimation on magnetic near field noise from PCB by FDTD implemented non-linear switching transistor

Takashi Kasuga, Motoshi Tanaka, Hiroshi Inoue

Research output: Contribution to journal › Conference article › peer-review

Abstract

The wideband electromagnetic noise radiated from PCB model driven by a switching device is one of the EMI problems. To estimate the noise radiation quantitatively, a switching transistor is modeled by FDTD method by using Ebers-Moll equivalent circuit, and its parameter is determined by simple measurement. And the magnetic near field noise is calculated by FDTD method implemented switching transistor. The calculated result of the switching voltage by FDTD method is corresponded to the SPICE and experimental results. The magnetic near field noise, when the 3 MHz clock pulse is applied to the source, is calculated by FDTD method and measured, and it is realized that the low frequency noise, less than 200 MHz, is large when compared with radiation efficiency S_21H. The noise simulation method using the FDTD method implemented the switching transistor can be very useful tool to estimate the noise radiation in the next step.

Original language	English
Pages (from-to)	727-732
Number of pages	6
Journal	IEEE International Symposium on Electromagnetic Compatibility
Volume	2
Publication status	Published - 2002 Jan 1
Event	2002 IEEE International Symposium on Electromagnetic Compatibility - Minneapolis, MN, United States Duration: 2002 Aug 19 → 2002 Aug 23

Keywords

FDTD method
Magnetic near field noise
PCB
Switching Transistor

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Estimation on magnetic near field noise from PCB by FDTD implemented non-linear switching transistor",

abstract = "The wideband electromagnetic noise radiated from PCB model driven by a switching device is one of the EMI problems. To estimate the noise radiation quantitatively, a switching transistor is modeled by FDTD method by using Ebers-Moll equivalent circuit, and its parameter is determined by simple measurement. And the magnetic near field noise is calculated by FDTD method implemented switching transistor. The calculated result of the switching voltage by FDTD method is corresponded to the SPICE and experimental results. The magnetic near field noise, when the 3 MHz clock pulse is applied to the source, is calculated by FDTD method and measured, and it is realized that the low frequency noise, less than 200 MHz, is large when compared with radiation efficiency S21H. The noise simulation method using the FDTD method implemented the switching transistor can be very useful tool to estimate the noise radiation in the next step.",

keywords = "FDTD method, Magnetic near field noise, PCB, Switching Transistor",

author = "Takashi Kasuga and Motoshi Tanaka and Hiroshi Inoue",

year = "2002",

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language = "English",

volume = "2",

pages = "727--732",

journal = "IEEE International Symposium on Electromagnetic Compatibility",

issn = "0190-1494",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Symposium on Electromagnetic Compatibility ; Conference date: 19-08-2002 Through 23-08-2002",

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TY - JOUR

T1 - Estimation on magnetic near field noise from PCB by FDTD implemented non-linear switching transistor

AU - Kasuga, Takashi

AU - Tanaka, Motoshi

AU - Inoue, Hiroshi

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The wideband electromagnetic noise radiated from PCB model driven by a switching device is one of the EMI problems. To estimate the noise radiation quantitatively, a switching transistor is modeled by FDTD method by using Ebers-Moll equivalent circuit, and its parameter is determined by simple measurement. And the magnetic near field noise is calculated by FDTD method implemented switching transistor. The calculated result of the switching voltage by FDTD method is corresponded to the SPICE and experimental results. The magnetic near field noise, when the 3 MHz clock pulse is applied to the source, is calculated by FDTD method and measured, and it is realized that the low frequency noise, less than 200 MHz, is large when compared with radiation efficiency S21H. The noise simulation method using the FDTD method implemented the switching transistor can be very useful tool to estimate the noise radiation in the next step.

AB - The wideband electromagnetic noise radiated from PCB model driven by a switching device is one of the EMI problems. To estimate the noise radiation quantitatively, a switching transistor is modeled by FDTD method by using Ebers-Moll equivalent circuit, and its parameter is determined by simple measurement. And the magnetic near field noise is calculated by FDTD method implemented switching transistor. The calculated result of the switching voltage by FDTD method is corresponded to the SPICE and experimental results. The magnetic near field noise, when the 3 MHz clock pulse is applied to the source, is calculated by FDTD method and measured, and it is realized that the low frequency noise, less than 200 MHz, is large when compared with radiation efficiency S21H. The noise simulation method using the FDTD method implemented the switching transistor can be very useful tool to estimate the noise radiation in the next step.

KW - FDTD method

KW - Magnetic near field noise

KW - PCB

KW - Switching Transistor

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JO - IEEE International Symposium on Electromagnetic Compatibility

JF - IEEE International Symposium on Electromagnetic Compatibility

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T2 - 2002 IEEE International Symposium on Electromagnetic Compatibility

Y2 - 19 August 2002 through 23 August 2002

ER -