Estimation on magnetic near field noise from PCB by FDTD implemented non-linear switching transistor

Takashi Kasuga, Motoshi Tanaka, Hiroshi Inoue

    Research output: Contribution to journalConference articlepeer-review

    1 Citation (Scopus)

    Abstract

    The wideband electromagnetic noise radiated from PCB model driven by a switching device is one of the EMI problems. To estimate the noise radiation quantitatively, a switching transistor is modeled by FDTD method by using Ebers-Moll equivalent circuit, and its parameter is determined by simple measurement. And the magnetic near field noise is calculated by FDTD method implemented switching transistor. The calculated result of the switching voltage by FDTD method is corresponded to the SPICE and experimental results. The magnetic near field noise, when the 3 MHz clock pulse is applied to the source, is calculated by FDTD method and measured, and it is realized that the low frequency noise, less than 200 MHz, is large when compared with radiation efficiency S21H. The noise simulation method using the FDTD method implemented the switching transistor can be very useful tool to estimate the noise radiation in the next step.

    Original languageEnglish
    Pages (from-to)727-732
    Number of pages6
    JournalIEEE International Symposium on Electromagnetic Compatibility
    Volume2
    Publication statusPublished - 2002 Jan 1
    Event2002 IEEE International Symposium on Electromagnetic Compatibility - Minneapolis, MN, United States
    Duration: 2002 Aug 192002 Aug 23

    Keywords

    • FDTD method
    • Magnetic near field noise
    • PCB
    • Switching Transistor

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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