ESR signature of tetra-interstitial defect in silicon

T. Mchedlidze; Ichiro Yonenaga; M. Suezawa

doi:10.1016/j.mssp.2003.07.015

ESR signature of tetra-interstitial defect in silicon

T. Mchedlidze, Ichiro Yonenaga, M. Suezawa

Materials Design Division

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The electron spin resonance spectra Si-B3 and NL51 were detected in hydrogen-doped float-zone-grown silicon (Si) samples after electron-irradiation and annealing for the first time. Recently, the Si-B3 spectra were attributed to tetra-self-interstitial (I₄) agglomerates in positive charge-state, however an origin of the NL51 spectra was not yet established. Results obtained in this study suggest that the NL51 originate from an excitonic state of neutral I₄ agglomerate in Si. Therefore, detection of interstitial agglomerates in Si at early stages of their formation becomes possible.

Original language	English
Pages (from-to)	263-266
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	6
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mssp.2003.07.015
Publication status	Published - 2003 Oct 1

Keywords

Clusters
Defects in silicon
ESR
Intrinsic defects

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{bc606f07be1747a18bbf27a58783fc63,

title = "ESR signature of tetra-interstitial defect in silicon",

abstract = "The electron spin resonance spectra Si-B3 and NL51 were detected in hydrogen-doped float-zone-grown silicon (Si) samples after electron-irradiation and annealing for the first time. Recently, the Si-B3 spectra were attributed to tetra-self-interstitial (I4) agglomerates in positive charge-state, however an origin of the NL51 spectra was not yet established. Results obtained in this study suggest that the NL51 originate from an excitonic state of neutral I4 agglomerate in Si. Therefore, detection of interstitial agglomerates in Si at early stages of their formation becomes possible.",

keywords = "Clusters, Defects in silicon, ESR, Intrinsic defects",

author = "T. Mchedlidze and Ichiro Yonenaga and M. Suezawa",

year = "2003",

month = oct,

day = "1",

doi = "10.1016/j.mssp.2003.07.015",

language = "English",

volume = "6",

pages = "263--266",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "5-6",

}

TY - JOUR

T1 - ESR signature of tetra-interstitial defect in silicon

AU - Mchedlidze, T.

AU - Yonenaga, Ichiro

AU - Suezawa, M.

PY - 2003/10/1

Y1 - 2003/10/1

N2 - The electron spin resonance spectra Si-B3 and NL51 were detected in hydrogen-doped float-zone-grown silicon (Si) samples after electron-irradiation and annealing for the first time. Recently, the Si-B3 spectra were attributed to tetra-self-interstitial (I4) agglomerates in positive charge-state, however an origin of the NL51 spectra was not yet established. Results obtained in this study suggest that the NL51 originate from an excitonic state of neutral I4 agglomerate in Si. Therefore, detection of interstitial agglomerates in Si at early stages of their formation becomes possible.

AB - The electron spin resonance spectra Si-B3 and NL51 were detected in hydrogen-doped float-zone-grown silicon (Si) samples after electron-irradiation and annealing for the first time. Recently, the Si-B3 spectra were attributed to tetra-self-interstitial (I4) agglomerates in positive charge-state, however an origin of the NL51 spectra was not yet established. Results obtained in this study suggest that the NL51 originate from an excitonic state of neutral I4 agglomerate in Si. Therefore, detection of interstitial agglomerates in Si at early stages of their formation becomes possible.

KW - Clusters

KW - Defects in silicon

KW - ESR

KW - Intrinsic defects

UR - http://www.scopus.com/inward/record.url?scp=1842431475&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1842431475&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2003.07.015

DO - 10.1016/j.mssp.2003.07.015

M3 - Article

AN - SCOPUS:1842431475

VL - 6

SP - 263

EP - 266

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 5-6

ER -