Abstract
The electron spin resonance spectra Si-B3 and NL51 were detected in hydrogen-doped float-zone-grown silicon (Si) samples after electron-irradiation and annealing for the first time. Recently, the Si-B3 spectra were attributed to tetra-self-interstitial (I4) agglomerates in positive charge-state, however an origin of the NL51 spectra was not yet established. Results obtained in this study suggest that the NL51 originate from an excitonic state of neutral I4 agglomerate in Si. Therefore, detection of interstitial agglomerates in Si at early stages of their formation becomes possible.
Original language | English |
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Pages (from-to) | 263-266 |
Number of pages | 4 |
Journal | Materials Science in Semiconductor Processing |
Volume | 6 |
Issue number | 5-6 |
DOIs | |
Publication status | Published - 2003 Oct 1 |
Keywords
- Clusters
- Defects in silicon
- ESR
- Intrinsic defects
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering