ESR signature of tetra-interstitial defect in silicon

T. Mchedlidze, Ichiro Yonenaga, M. Suezawa

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The electron spin resonance spectra Si-B3 and NL51 were detected in hydrogen-doped float-zone-grown silicon (Si) samples after electron-irradiation and annealing for the first time. Recently, the Si-B3 spectra were attributed to tetra-self-interstitial (I4) agglomerates in positive charge-state, however an origin of the NL51 spectra was not yet established. Results obtained in this study suggest that the NL51 originate from an excitonic state of neutral I4 agglomerate in Si. Therefore, detection of interstitial agglomerates in Si at early stages of their formation becomes possible.

Original languageEnglish
Pages (from-to)263-266
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume6
Issue number5-6
DOIs
Publication statusPublished - 2003 Oct 1

Keywords

  • Clusters
  • Defects in silicon
  • ESR
  • Intrinsic defects

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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