Erratum: Using gate-modulated Raman scattering and electron-phonon interactions to probe single-layer graphene: A different approach to assign phonon combination modes (Physical Review B - Condensed Matter and Materials Physics (2012) 86 (195434))

D. L. Mafra; J. Kong; K. Sato; R. Saito; M. S. Dresselhaus; P. T. Araujo

doi:10.1103/PhysRevB.86.239902

Erratum: Using gate-modulated Raman scattering and electron-phonon interactions to probe single-layer graphene: A different approach to assign phonon combination modes (Physical Review B - Condensed Matter and Materials Physics (2012) 86 (195434))

D. L. Mafra, J. Kong, K. Sato, R. Saito, M. S. Dresselhaus, P. T. Araujo

SCI - Physics

Research output: Contribution to journal › Comment/debate

1 Citation (Scopus)

Original language	English
Article number	239902
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	86
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.86.239902
Publication status	Published - 2012 Dec 7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.86.239902

Cite this

Mafra, D. L., Kong, J., Sato, K., Saito, R., Dresselhaus, M. S., & Araujo, P. T. (2012). Erratum: Using gate-modulated Raman scattering and electron-phonon interactions to probe single-layer graphene: A different approach to assign phonon combination modes (Physical Review B - Condensed Matter and Materials Physics (2012) 86 (195434)). Physical Review B - Condensed Matter and Materials Physics, 86(23), [239902]. https://doi.org/10.1103/PhysRevB.86.239902

Erratum : Using gate-modulated Raman scattering and electron-phonon interactions to probe single-layer graphene: A different approach to assign phonon combination modes (Physical Review B - Condensed Matter and Materials Physics (2012) 86 (195434)). / Mafra, D. L.; Kong, J.; Sato, K.; Saito, R.; Dresselhaus, M. S.; Araujo, P. T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 86, No. 23, 239902, 07.12.2012.

Research output: Contribution to journal › Comment/debate

Mafra, DL, Kong, J, Sato, K, Saito, R, Dresselhaus, MS & Araujo, PT 2012, 'Erratum: Using gate-modulated Raman scattering and electron-phonon interactions to probe single-layer graphene: A different approach to assign phonon combination modes (Physical Review B - Condensed Matter and Materials Physics (2012) 86 (195434))', Physical Review B - Condensed Matter and Materials Physics, vol. 86, no. 23, 239902. https://doi.org/10.1103/PhysRevB.86.239902

Mafra DL, Kong J, Sato K, Saito R, Dresselhaus MS, Araujo PT. Erratum: Using gate-modulated Raman scattering and electron-phonon interactions to probe single-layer graphene: A different approach to assign phonon combination modes (Physical Review B - Condensed Matter and Materials Physics (2012) 86 (195434)). Physical Review B - Condensed Matter and Materials Physics. 2012 Dec 7;86(23). 239902. https://doi.org/10.1103/PhysRevB.86.239902

Mafra, D. L. ; Kong, J. ; Sato, K. ; Saito, R. ; Dresselhaus, M. S. ; Araujo, P. T. / Erratum : Using gate-modulated Raman scattering and electron-phonon interactions to probe single-layer graphene: A different approach to assign phonon combination modes (Physical Review B - Condensed Matter and Materials Physics (2012) 86 (195434)). In: Physical Review B - Condensed Matter and Materials Physics. 2012 ; Vol. 86, No. 23.

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