Erratum: Strain relaxation mechanism of InGaN thin film grown on m-GaN [Phys. Status Solidi C 8, 444-446 (2011)]

Takashi Hanada, Taka aki Shimada, Shi Yang Ji, Kenji Hobo, Yuhuai Liu, Takashi Matsuoka

Research output: Contribution to journalComment/debatepeer-review

Abstract

The signs of the off-angle toward +c-direction of the miscut m-GaN substrates indicated in Figs. 1 and 2 and in the text should be reversed.

Original languageEnglish
Number of pages1
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number8-9
DOIs
Publication statusPublished - 2012 Aug 1

Keywords

  • InGaN
  • Misfit dislocation
  • Strain relaxation
  • m-plane

ASJC Scopus subject areas

  • Condensed Matter Physics

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