Erratum: Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth (Applied Physics Letters (2001) 79 (746))

Takeshi Murata, Hideki Nakazawa, Yoshikazu Tsukidate, Maki Suemitsu

Research output: Contribution to journalComment/debatepeer-review

Original languageEnglish
Pages (from-to)184
Number of pages1
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 2002 Jul 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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