Erratum: Reduction of efficiency droop in semipolar (11̄01) InGaN/GaN light emitting diodes grown on patterned silicon substrates (Applied Physics Express (2011) 4 (012105))

Ching Hsueh Chiu, Da Wei Lin, Chien Chung Lin, Zhen Yu Li, Wei Ting Chang, Hung Wen Hsu, Hao Chung Kuo, Tien Chang Lu, Shing Chung Wang, Wei Tsai Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

Research output: Contribution to journalComment/debatepeer-review

1 Citation (Scopus)
Original languageEnglish
Article number039201
JournalApplied Physics Express
Volume4
Issue number3
DOIs
Publication statusPublished - 2011 Mar 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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