Erratum - Publisher’s note: Amorphous gallium oxide as an improved host for inorganic light-emitting thin film semiconductor fabricated at room temperature on glass (ECS J. Solid State Sci. Technol. (2017) 6 (P410) DOI: 10.1149/2.0181707jss)

Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya

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