Erratum - Publisher’s note: Amorphous gallium oxide as an improved host for inorganic light-emitting thin film semiconductor fabricated at room temperature on glass (ECS J. Solid State Sci. Technol. (2017) 6 (P410) DOI: 10.1149/2.0181707jss)

Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya

Research output: Contribution to journalComment/debatepeer-review

Abstract

This article was originally published on May 24, 2017, with an error in line 12 of the first paragraph of the Results and Discussion section, on page P411. ECS apologizes for this error. The article was corrected online on June 29, 2017.

Original languageEnglish
Pages (from-to)X1
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number8
DOIs
Publication statusPublished - 2017 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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