Erratum - Publisher’s note: Amorphous gallium oxide as an improved host for inorganic light-emitting thin film semiconductor fabricated at room temperature on glass (ECS J. Solid State Sci. Technol. (2017) 6 (P410) DOI: 10.1149/2.0181707jss)

Naoto Watanabe; Junghwan Kim; Keisuke Ide; Hidenori Hiramatsu; Hiroshi Kumigashira; Shigenori Ueda; Hideo Hosono; Toshio Kamiya

doi:10.1149/2.0171708jss

Erratum - Publisher’s note: Amorphous gallium oxide as an improved host for inorganic light-emitting thin film semiconductor fabricated at room temperature on glass (ECS J. Solid State Sci. Technol. (2017) 6 (P410) DOI: 10.1149/2.0181707jss)

Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

This article was originally published on May 24, 2017, with an error in line 12 of the first paragraph of the Results and Discussion section, on page P411. ECS apologizes for this error. The article was corrected online on June 29, 2017.

Original language	English
Pages (from-to)	X1
Journal	ECS Journal of Solid State Science and Technology
Volume	6
Issue number	8
DOIs	https://doi.org/10.1149/2.0171708jss
Publication status	Published - 2017 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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Watanabe, N., Kim, J., Ide, K., Hiramatsu, H., Kumigashira, H., Ueda, S., Hosono, H., & Kamiya, T. (2017). Erratum - Publisher’s note: Amorphous gallium oxide as an improved host for inorganic light-emitting thin film semiconductor fabricated at room temperature on glass (ECS J. Solid State Sci. Technol. (2017) 6 (P410) DOI: 10.1149/2.0181707jss). ECS Journal of Solid State Science and Technology, 6(8), X1. https://doi.org/10.1149/2.0171708jss

Erratum - Publisher’s note : Amorphous gallium oxide as an improved host for inorganic light-emitting thin film semiconductor fabricated at room temperature on glass (ECS J. Solid State Sci. Technol. (2017) 6 (P410) DOI: 10.1149/2.0181707jss). / Watanabe, Naoto; Kim, Junghwan; Ide, Keisuke et al.

In: ECS Journal of Solid State Science and Technology, Vol. 6, No. 8, 01.01.2017, p. X1.

Research output: Contribution to journal › Comment/debate › peer-review

Watanabe, N, Kim, J, Ide, K, Hiramatsu, H, Kumigashira, H, Ueda, S, Hosono, H & Kamiya, T 2017, 'Erratum - Publisher’s note: Amorphous gallium oxide as an improved host for inorganic light-emitting thin film semiconductor fabricated at room temperature on glass (ECS J. Solid State Sci. Technol. (2017) 6 (P410) DOI: 10.1149/2.0181707jss)', ECS Journal of Solid State Science and Technology, vol. 6, no. 8, pp. X1. https://doi.org/10.1149/2.0171708jss

Watanabe N, Kim J, Ide K, Hiramatsu H, Kumigashira H, Ueda S et al. Erratum - Publisher’s note: Amorphous gallium oxide as an improved host for inorganic light-emitting thin film semiconductor fabricated at room temperature on glass (ECS J. Solid State Sci. Technol. (2017) 6 (P410) DOI: 10.1149/2.0181707jss). ECS Journal of Solid State Science and Technology. 2017 Jan 1;6(8):X1. doi: 10.1149/2.0171708jss

Watanabe, Naoto ; Kim, Junghwan ; Ide, Keisuke et al. / Erratum - Publisher’s note : Amorphous gallium oxide as an improved host for inorganic light-emitting thin film semiconductor fabricated at room temperature on glass (ECS J. Solid State Sci. Technol. (2017) 6 (P410) DOI: 10.1149/2.0181707jss). In: ECS Journal of Solid State Science and Technology. 2017 ; Vol. 6, No. 8. pp. X1.

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AU - Watanabe, Naoto

AU - Kim, Junghwan

AU - Ide, Keisuke

AU - Hiramatsu, Hidenori

AU - Kumigashira, Hiroshi

AU - Ueda, Shigenori

AU - Hosono, Hideo

AU - Kamiya, Toshio

PY - 2017/1/1

Y1 - 2017/1/1

N2 - This article was originally published on May 24, 2017, with an error in line 12 of the first paragraph of the Results and Discussion section, on page P411. ECS apologizes for this error. The article was corrected online on June 29, 2017.

AB - This article was originally published on May 24, 2017, with an error in line 12 of the first paragraph of the Results and Discussion section, on page P411. ECS apologizes for this error. The article was corrected online on June 29, 2017.

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Erratum - Publisher’s note: Amorphous gallium oxide as an improved host for inorganic light-emitting thin film semiconductor fabricated at room temperature on glass (ECS J. Solid State Sci. Technol. (2017) 6 (P410) DOI: 10.1149/2.0181707jss)

Abstract

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