Erratum: Preparation, thermoelectric properties, and crystal structure of boron-doped Mg2Si single crystals (AIP Advances (2020) 10 (035115) DOI: 10.1063/1.5143839)

Kei Hayashi, Wataru Saito, Kazuya Sugimoto, Kenji Ohoyama, Koichi Hayashi, Naohisa Happo, Masahide Harada, Kenichi Oikawa, Yasuhiro Inamura, Yuzuru Miyazaki

Research output: Contribution to journalComment/debatepeer-review

Abstract

Mg/B occupancy (occ.) in Table II of the original article1 was not correct. This erratum presents the corrected version of Table II. The B occ. should be half of the B-doping concentration x. Thus, the Mg/B occ. for x = 0.25%, 0.50%, and 0.75% should read 99.875/0.125, 99.75/0.25, and 99.625/0.375, respectively. Using these values, we perform single-crystal structural refinement. As a result, the Si occ. for x = 0.50% and 0.75% is slightly changed by +0.3%. The other changes are isotropic atomic displacement parameters (Uiso) for x = 0.75%: the difference is only +0.0001 2. These changes are minor and do not affect the original conclusion that the Si vacancy tends to increase with increasing x.

Original languageEnglish
Article number029903
JournalAIP Advances
Volume11
Issue number2
DOIs
Publication statusPublished - 2021 Feb 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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