Erratum: Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates (Applied Physics Letters (2008) 92 (091912))

S. F. Chichibu, H. Yamaguchi, L. Zhao, M. Kubota, K. Okamoto, H. Ohta

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4 Citations (Scopus)

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