Erratum: Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates (Applied Physics Letters (2008) 92 (091912))

S. F. Chichibu; H. Yamaguchi; L. Zhao; M. Kubota; K. Okamoto; H. Ohta

doi:10.1063/1.2991440

Erratum: Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates (Applied Physics Letters (2008) 92 (091912))

S. F. Chichibu, H. Yamaguchi, L. Zhao, M. Kubota, K. Okamoto, H. Ohta

Division of Measurements

Research output: Contribution to journal › Comment/debate › peer-review

4 Citations (Scopus)

Original language	English
Article number	129901
Journal	Applied Physics Letters
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.2991440
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2991440

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Chichibu, S. F., Yamaguchi, H., Zhao, L., Kubota, M., Okamoto, K., & Ohta, H. (2008). Erratum: Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates (Applied Physics Letters (2008) 92 (091912)). Applied Physics Letters, 93(12), [129901]. https://doi.org/10.1063/1.2991440

Erratum : Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates (Applied Physics Letters (2008) 92 (091912)). / Chichibu, S. F.; Yamaguchi, H.; Zhao, L.; Kubota, M.; Okamoto, K.; Ohta, H.

In: Applied Physics Letters, Vol. 93, No. 12, 129901, 2008.

Research output: Contribution to journal › Comment/debate › peer-review

Chichibu, SF, Yamaguchi, H, Zhao, L, Kubota, M, Okamoto, K & Ohta, H 2008, 'Erratum: Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates (Applied Physics Letters (2008) 92 (091912))', Applied Physics Letters, vol. 93, no. 12, 129901. https://doi.org/10.1063/1.2991440

Chichibu SF, Yamaguchi H, Zhao L, Kubota M, Okamoto K, Ohta H. Erratum: Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates (Applied Physics Letters (2008) 92 (091912)). Applied Physics Letters. 2008;93(12). 129901. https://doi.org/10.1063/1.2991440

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Erratum: Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates (Applied Physics Letters (2008) 92 (091912))

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