Erratum: Influence of oxygen concentration of SI wafer surface in SI emission on Nano ordered three-dimensional structure devices (E-Journal of Surface Science and Nanotechnology (2018) 15 (127-134) DOI: 10.1380/ejssnt.2017.127)

Etsuo Fukuda, Tetsuo Endoh, Takashi Ishikawa, Koji Izunome, Kazutaka Kamijo, Moriya Miyashita, Takao Sakamoto, Hiroyuki Kageshima

Research output: Contribution to journalComment/debatepeer-review

Abstract

The publisher would like to apologize for errors that occurred in the article [1] published on 14 December, 2017. Captions of Fig. 5 and Tables I, II, and III are inappropriate. The captions should be corrected as follows: FIG. 5. Pillar cross-sectional structure images (a) before oxidation and (b) after oxidation. (c) An actual cross-sectional shape of the pillar after oxidation. TABLE I. Experimental parameter list. TABLE II. Oxidation temperature dependent experimental parameters. TABLE III. Comparison of difference between high and low oxygen concentration wafer. Another correction is that “Fig. 9” which appears at the end of Sec. IV C. (p. 132) should read as “Fig. 10”. The publisher takes full responsibility for these errors.

Original languageEnglish
Pages (from-to)375
Number of pages1
Journale-Journal of Surface Science and Nanotechnology
Volume16
DOIs
Publication statusPublished - 2018 Aug 25

ASJC Scopus subject areas

  • Biotechnology
  • Bioengineering
  • Condensed Matter Physics
  • Mechanics of Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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