Erratum: Heavily Si-doped GaAs grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane" (Applied Physics Letters (1992) 60 (489))

S. Chichibu, A. Iwai, S. Matsumoto, H. Higuchi

Research output: Contribution to journalComment/debatepeer-review

2 Citations (Scopus)
Original languageEnglish
Pages (from-to)2439
Number of pages1
JournalApplied Physics Letters
Volume60
Issue number19
DOIs
Publication statusPublished - 1992
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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