Erratum: Chemical structure of interfacial transition layer formed on Si(100) and its dependence on oxidation temperature, annealing in forming gas, and difference in oxidizing species (Japanese Journal of Applied Physics (2013) 52 031302)

Tomoyuki Suwa; Akinobu Teramoto; Yuki Kumagai; Kenichi Abe; Xiang Li; Yukihisa Nakao; Masashi Yamamoto; Hiroshi Nohira; Takayuki Muro; Toyohiko Kinoshita; Shigetoshi Sugawa; Tadahiro Ohmi; Takeo Hattori

doi:10.7567/JJAP.52.069203

Erratum: Chemical structure of interfacial transition layer formed on Si(100) and its dependence on oxidation temperature, annealing in forming gas, and difference in oxidizing species (Japanese Journal of Applied Physics (2013) 52 031302)

Tomoyuki Suwa, Akinobu Teramoto, Yuki Kumagai, Kenichi Abe, Xiang Li, Yukihisa Nakao, Masashi Yamamoto, Hiroshi Nohira, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Article number	069203
Journal	Japanese journal of applied physics
Volume	52
Issue number	6 PART 1
DOIs	https://doi.org/10.7567/JJAP.52.069203
Publication status	Published - 2013 Jun

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Suwa, T., Teramoto, A., Kumagai, Y., Abe, K., Li, X., Nakao, Y., Yamamoto, M., Nohira, H., Muro, T., Kinoshita, T., Sugawa, S., Ohmi, T., & Hattori, T. (2013). Erratum: Chemical structure of interfacial transition layer formed on Si(100) and its dependence on oxidation temperature, annealing in forming gas, and difference in oxidizing species (Japanese Journal of Applied Physics (2013) 52 031302). Japanese journal of applied physics, 52(6 PART 1), [069203]. https://doi.org/10.7567/JJAP.52.069203

Erratum : Chemical structure of interfacial transition layer formed on Si(100) and its dependence on oxidation temperature, annealing in forming gas, and difference in oxidizing species (Japanese Journal of Applied Physics (2013) 52 031302). / Suwa, Tomoyuki; Teramoto, Akinobu; Kumagai, Yuki et al.

In: Japanese journal of applied physics, Vol. 52, No. 6 PART 1, 069203, 06.2013.

Research output: Contribution to journal › Comment/debate › peer-review

Suwa, T, Teramoto, A, Kumagai, Y, Abe, K, Li, X, Nakao, Y, Yamamoto, M, Nohira, H, Muro, T, Kinoshita, T, Sugawa, S, Ohmi, T & Hattori, T 2013, 'Erratum: Chemical structure of interfacial transition layer formed on Si(100) and its dependence on oxidation temperature, annealing in forming gas, and difference in oxidizing species (Japanese Journal of Applied Physics (2013) 52 031302)', Japanese journal of applied physics, vol. 52, no. 6 PART 1, 069203. https://doi.org/10.7567/JJAP.52.069203

Suwa T, Teramoto A, Kumagai Y, Abe K, Li X, Nakao Y et al. Erratum: Chemical structure of interfacial transition layer formed on Si(100) and its dependence on oxidation temperature, annealing in forming gas, and difference in oxidizing species (Japanese Journal of Applied Physics (2013) 52 031302). Japanese journal of applied physics. 2013 Jun;52(6 PART 1):069203. doi: 10.7567/JJAP.52.069203

Suwa, Tomoyuki ; Teramoto, Akinobu ; Kumagai, Yuki et al. / Erratum : Chemical structure of interfacial transition layer formed on Si(100) and its dependence on oxidation temperature, annealing in forming gas, and difference in oxidizing species (Japanese Journal of Applied Physics (2013) 52 031302). In: Japanese journal of applied physics. 2013 ; Vol. 52, No. 6 PART 1.

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author = "Tomoyuki Suwa and Akinobu Teramoto and Yuki Kumagai and Kenichi Abe and Xiang Li and Yukihisa Nakao and Masashi Yamamoto and Hiroshi Nohira and Takayuki Muro and Toyohiko Kinoshita and Shigetoshi Sugawa and Tadahiro Ohmi and Takeo Hattori",

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AU - Suwa, Tomoyuki

AU - Teramoto, Akinobu

AU - Kumagai, Yuki

AU - Abe, Kenichi

AU - Li, Xiang

AU - Nakao, Yukihisa

AU - Yamamoto, Masashi

AU - Nohira, Hiroshi

AU - Muro, Takayuki

AU - Kinoshita, Toyohiko

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

AU - Hattori, Takeo

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Erratum: Chemical structure of interfacial transition layer formed on Si(100) and its dependence on oxidation temperature, annealing in forming gas, and difference in oxidizing species (Japanese Journal of Applied Physics (2013) 52 031302)

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