Erratum: Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102))

H. Takahashi; J. Okabayashi; S. Toyoda; H. Kumigashira; M. Oshima; K. Ikeda; G. L. Liu; Z. Liu; K. Usuda

doi:10.1063/1.2364452

Erratum: Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102))

H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, K. Usuda

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Article number	169902
Journal	Applied Physics Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1063/1.2364452
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2364452

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Takahashi, H., Okabayashi, J., Toyoda, S., Kumigashira, H., Oshima, M., Ikeda, K., Liu, G. L., Liu, Z., & Usuda, K. (2006). Erratum: Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102)). Applied Physics Letters, 89(16), [169902]. https://doi.org/10.1063/1.2364452

Erratum : Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102)). / Takahashi, H.; Okabayashi, J.; Toyoda, S.; Kumigashira, H.; Oshima, M.; Ikeda, K.; Liu, G. L.; Liu, Z.; Usuda, K.

In: Applied Physics Letters, Vol. 89, No. 16, 169902, 2006.

Research output: Contribution to journal › Comment/debate › peer-review

Takahashi, H, Okabayashi, J, Toyoda, S , Kumigashira, H, Oshima, M, Ikeda, K, Liu, GL, Liu, Z & Usuda, K 2006, 'Erratum: Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102))', Applied Physics Letters, vol. 89, no. 16, 169902. https://doi.org/10.1063/1.2364452

Takahashi H, Okabayashi J, Toyoda S , Kumigashira H, Oshima M, Ikeda K et al. Erratum: Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102)). Applied Physics Letters. 2006;89(16). 169902. https://doi.org/10.1063/1.2364452

Takahashi, H. ; Okabayashi, J. ; Toyoda, S. ; Kumigashira, H. ; Oshima, M. ; Ikeda, K. ; Liu, G. L. ; Liu, Z. ; Usuda, K. / Erratum : Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102)). In: Applied Physics Letters. 2006 ; Vol. 89, No. 16.

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Erratum: Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102))

ASJC Scopus subject areas

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