Erratum: Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102))

H. Takahashi; J. Okabayashi; S. Toyoda; H. Kumigashira; M. Oshima; K. Ikeda; G. L. Liu; Z. Liu; K. Usuda

doi:10.1063/1.2364452

Erratum: Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102))

H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, K. Usuda

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Article number	169902
Journal	Applied Physics Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1063/1.2364452
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2364452

Cite this

Takahashi, H., Okabayashi, J., Toyoda, S., Kumigashira, H., Oshima, M., Ikeda, K., Liu, G. L., Liu, Z., & Usuda, K. (2006). Erratum: Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102)). Applied Physics Letters, 89(16), [169902]. https://doi.org/10.1063/1.2364452

Erratum : Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102)). / Takahashi, H.; Okabayashi, J.; Toyoda, S. et al.

In: Applied Physics Letters, Vol. 89, No. 16, 169902, 2006.

Research output: Contribution to journal › Comment/debate › peer-review

Takahashi, H, Okabayashi, J, Toyoda, S , Kumigashira, H, Oshima, M, Ikeda, K, Liu, GL, Liu, Z & Usuda, K 2006, 'Erratum: Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102))', Applied Physics Letters, vol. 89, no. 16, 169902. https://doi.org/10.1063/1.2364452

Takahashi H, Okabayashi J, Toyoda S , Kumigashira H, Oshima M, Ikeda K et al. Erratum: Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102)). Applied Physics Letters. 2006;89(16):169902. doi: 10.1063/1.2364452

@article{1df8147308054bb89c9636b512b33443,

title = "Erratum: Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102))",

author = "H. Takahashi and J. Okabayashi and S. Toyoda and H. Kumigashira and M. Oshima and K. Ikeda and Liu, {G. L.} and Z. Liu and K. Usuda",

year = "2006",

doi = "10.1063/1.2364452",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "16",

}

TY - JOUR

T1 - Erratum

T2 - Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102))

AU - Takahashi, H.

AU - Okabayashi, J.

AU - Toyoda, S.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Ikeda, K.

AU - Liu, G. L.

AU - Liu, Z.

AU - Usuda, K.

PY - 2006

Y1 - 2006

UR - http://www.scopus.com/inward/record.url?scp=33750180211&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750180211&partnerID=8YFLogxK

U2 - 10.1063/1.2364452

DO - 10.1063/1.2364452

M3 - Comment/debate

AN - SCOPUS:33750180211

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 169902

ER -

Erratum: Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102))

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this