Erratum: Annealing-time dependence in interfacial reaction between poly-Si electrode and HfO2 Si gate stack studied by synchrotron radiation photoemission and x-ray absorption spectroscopy (Applied Physics Letters (2006) 89 (012102))

H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, K. Usuda

Research output: Contribution to journalComment/debatepeer-review

1 Citation (Scopus)
Original languageEnglish
Article number169902
JournalApplied Physics Letters
Volume89
Issue number16
DOIs
Publication statusPublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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