Erratum: A reliable nonvolatile memory using alloy nanodot layer with extremely high density (Japanese Journal of Applied Physics (2009) 48 (106505))

Yun Heub Song; Ji Chel Bea; Kang Wook Lee; Gae Hun Lee; Tetsu Tanaka; Mitsumasa Koyanagi

doi:10.1143/JJAP.49.039201

Erratum: A reliable nonvolatile memory using alloy nanodot layer with extremely high density (Japanese Journal of Applied Physics (2009) 48 (106505))

Yun Heub Song, Ji Chel Bea, Kang Wook Lee, Gae Hun Lee, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Contribution to journal › Comment/debate

Original language	English
Journal	Japanese journal of applied physics
Volume	49
Issue number	3 PART 1
DOIs	https://doi.org/10.1143/JJAP.49.039201
Publication status	Published - 2010 Jul 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.49.039201

Cite this

Song, Y. H., Bea, J. C., Lee, K. W., Lee, G. H., Tanaka, T., & Koyanagi, M. (2010). Erratum: A reliable nonvolatile memory using alloy nanodot layer with extremely high density (Japanese Journal of Applied Physics (2009) 48 (106505)). Japanese journal of applied physics, 49(3 PART 1). https://doi.org/10.1143/JJAP.49.039201

Erratum : A reliable nonvolatile memory using alloy nanodot layer with extremely high density (Japanese Journal of Applied Physics (2009) 48 (106505)). / Song, Yun Heub; Bea, Ji Chel; Lee, Kang Wook; Lee, Gae Hun; Tanaka, Tetsu; Koyanagi, Mitsumasa.

In: Japanese journal of applied physics, Vol. 49, No. 3 PART 1, 01.07.2010.

Research output: Contribution to journal › Comment/debate

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