Erosion behaviour of physically vapour-deposited and chemically vapour-deposited SiC films coated on molybdenum during oxygenated argon beam thinning

T. Shikama, M. Kitajima, M. Fukutomi, M. Okada

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The erosion behaviour during bombardment with a 5 keV argon beam at room temperature was studied for silicon carbide (SiC) films of thickness of about 10 μm coated on molybdenum by physical vapour deposition (PVD) and chemical vapour deposition (CVD). The PVD SiC (plasma-assisted ion plating) exhibited a greater thinning rate than the CVD SiC film. Electron probe X-ray microanalysis revealed that the chemical composition of PVD SiC was changed to a composition enriched in silicon by the bombardment, and there was a notable change in its surface morphology. The CVD SiC retained its initial chemical composition with only a small change in its surface morphology. Auger electron spectroscopy indicated that silicon oxide was formed on the surface of PVD SiC by the bombardment. The greater thinning rate and easier change in chemical composition in PVD SiC could be attributed to its readier chemical reaction with oxygen due to its more non-uniform structure and weaker chemical bonding. Oxygen was present as one of the impurities in the argon beam.

Original languageEnglish
Pages (from-to)191-199
Number of pages9
JournalThin Solid Films
Volume117
Issue number3
DOIs
Publication statusPublished - 1984 Jul 20

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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