Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors

Kanagasekaran Thangavel, Hidekazu Shimotani, Susumu Ikeda, Hui Shang, Ryotaro Kumashiro, Katsumi Tanigaki

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Carrier injection from Au electrodes to organic thin-film active layers can be greatly improved for both electrons and holes by nano-structural surface control of organic semiconducting thin films using long-chain aliphatic molecules on a SiO2 gate insulator. In this paper, we demonstrate a stark contrast for a 2,5-bis(4-biphenylyl)bithiophene (BP2T) active semiconducting layer grown on a modified SiO2 dielectric gate insulator between two different modifications of tetratetracontane and poly(methyl methacrylate) thin films. Important evidence that the field effect transistor (FET) characteristics are independent of electrode metals with different work functions is given by the observation of a conversion of the metal-semiconductor contact from the Schottky limit to the Bardeen limit. An air-stable light emitting FET with an Au electrode is demonstrated.

Original languageEnglish
Article number043304
JournalApplied Physics Letters
Volume107
Issue number4
DOIs
Publication statusPublished - 2015 Jul 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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