Equilibrium segregation coefficient and solid solubility of B in Czochralski Ge crystal growth

Toshinori Taishi, Yutaka Ohno, Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

This paper reports reevaluated results of the segregation coefficient of boron (B) and a solid solubility of B at melting point of Ge. The crystal growth was carried out from a B-saturated Ge melt, and a solid solubility of B in Ge crystal was estimated to be 3 ± 0.5 × 1018 cm- 3. The effective segregation coefficients of 4 and 2.5 were obtained at pulling rates of 10 and 30 mm/h, respectively. An equilibrium segregation coefficient was estimated to be 6.2 and it was considerably smaller than those reported previously. Therefore, boron atoms in Ge melt easily interact with residual O atoms existing in the Ge melt, resulting in various values reported of the segregation coefficient. A phase diagram of Ge and B at Ge-rich region estimated from obtained experimental results is proposed.

Original languageEnglish
Pages (from-to)2409-2412
Number of pages4
JournalThin Solid Films
Volume518
Issue number9
DOIs
Publication statusPublished - 2010 Feb 26

Keywords

  • Boron doping
  • Czochralski crystal growth
  • Germanium
  • Segregation coefficient
  • Solid solubility

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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