Abstract
Nitrogen ions (N+2) with energy 62 keV were implanted into 100 nm thick Ti films evaporated onto thermally cleaned NaCl substrates. Unimplanted and N-implanted Ti films were examined by transmission electron microscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. It was revealed that N-implantation expands the h.c.p. Ti lattice and reduces the hydrogen concentration in the evaporated Ti film. The former induces the h.c.p.-f.c.c. transformation and then leads to the growth of (001) oriented TiNy by occupation of the octahedral sites in the f.c.c. Ti sublattice by N. The latter indicates the escape of H from TiHx and leads to the growth of (110) oriented TiNy by the similar occupation by N.
Original language | English |
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Pages (from-to) | 32-35 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 281-282 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1996 Aug 1 |
Keywords
- Epitaxy
- Nitrogen implantation
- Rutherford backscattering spectrometry
- Titanium nitride
- Transmission electron microscopy (TEM)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry