Epitaxy of titanium nitride thin films grown by nitrogen implantation

Y. Kasukabe, J. Ootubo, S. Takeda, Shinji Nagata, M. Kishimoto, Y. Fujino, S. Yamaguchi, Y. Yamada

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Nitrogen ions (N+2) with energy 62 keV were implanted into 100 nm thick Ti films evaporated onto thermally cleaned NaCl substrates. Unimplanted and N-implanted Ti films were examined by transmission electron microscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. It was revealed that N-implantation expands the h.c.p. Ti lattice and reduces the hydrogen concentration in the evaporated Ti film. The former induces the h.c.p.-f.c.c. transformation and then leads to the growth of (001) oriented TiNy by occupation of the octahedral sites in the f.c.c. Ti sublattice by N. The latter indicates the escape of H from TiHx and leads to the growth of (110) oriented TiNy by the similar occupation by N.

Original languageEnglish
Pages (from-to)32-35
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1996 Aug 1


  • Epitaxy
  • Nitrogen implantation
  • Rutherford backscattering spectrometry
  • Titanium nitride
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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