Epitaxy of titanium nitride thin films grown by nitrogen implantation

Y. Kasukabe; J. Ootubo; S. Takeda; S. Nagata; M. Kishimoto; Y. Fujino; S. Yamaguchi; Y. Yamada

doi:10.1016/0040-6090(96)08568-9

Epitaxy of titanium nitride thin films grown by nitrogen implantation

Y. Kasukabe, J. Ootubo, S. Takeda, S. Nagata, M. Kishimoto, Y. Fujino, S. Yamaguchi, Y. Yamada

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Nitrogen ions (N⁺₂) with energy 62 keV were implanted into 100 nm thick Ti films evaporated onto thermally cleaned NaCl substrates. Unimplanted and N-implanted Ti films were examined by transmission electron microscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. It was revealed that N-implantation expands the h.c.p. Ti lattice and reduces the hydrogen concentration in the evaporated Ti film. The former induces the h.c.p.-f.c.c. transformation and then leads to the growth of (001) oriented TiN_y by occupation of the octahedral sites in the f.c.c. Ti sublattice by N. The latter indicates the escape of H from TiH_x and leads to the growth of (110) oriented TiN_y by the similar occupation by N.

Original language	English
Pages (from-to)	32-35
Number of pages	4
Journal	Thin Solid Films
Volume	281-282
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(96)08568-9
Publication status	Published - 1996 Aug 1

Keywords

Epitaxy
Nitrogen implantation
Rutherford backscattering spectrometry
Titanium nitride
Transmission electron microscopy (TEM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(96)08568-9

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title = "Epitaxy of titanium nitride thin films grown by nitrogen implantation",

abstract = "Nitrogen ions (N+2) with energy 62 keV were implanted into 100 nm thick Ti films evaporated onto thermally cleaned NaCl substrates. Unimplanted and N-implanted Ti films were examined by transmission electron microscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. It was revealed that N-implantation expands the h.c.p. Ti lattice and reduces the hydrogen concentration in the evaporated Ti film. The former induces the h.c.p.-f.c.c. transformation and then leads to the growth of (001) oriented TiNy by occupation of the octahedral sites in the f.c.c. Ti sublattice by N. The latter indicates the escape of H from TiHx and leads to the growth of (110) oriented TiNy by the similar occupation by N.",

keywords = "Epitaxy, Nitrogen implantation, Rutherford backscattering spectrometry, Titanium nitride, Transmission electron microscopy (TEM)",

author = "Y. Kasukabe and J. Ootubo and S. Takeda and S. Nagata and M. Kishimoto and Y. Fujino and S. Yamaguchi and Y. Yamada",

year = "1996",

month = aug,

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doi = "10.1016/0040-6090(96)08568-9",

language = "English",

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pages = "32--35",

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number = "1-2",

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TY - JOUR

T1 - Epitaxy of titanium nitride thin films grown by nitrogen implantation

AU - Kasukabe, Y.

AU - Ootubo, J.

AU - Takeda, S.

AU - Nagata, S.

AU - Kishimoto, M.

AU - Fujino, Y.

AU - Yamaguchi, S.

AU - Yamada, Y.

PY - 1996/8/1

Y1 - 1996/8/1

N2 - Nitrogen ions (N+2) with energy 62 keV were implanted into 100 nm thick Ti films evaporated onto thermally cleaned NaCl substrates. Unimplanted and N-implanted Ti films were examined by transmission electron microscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. It was revealed that N-implantation expands the h.c.p. Ti lattice and reduces the hydrogen concentration in the evaporated Ti film. The former induces the h.c.p.-f.c.c. transformation and then leads to the growth of (001) oriented TiNy by occupation of the octahedral sites in the f.c.c. Ti sublattice by N. The latter indicates the escape of H from TiHx and leads to the growth of (110) oriented TiNy by the similar occupation by N.

AB - Nitrogen ions (N+2) with energy 62 keV were implanted into 100 nm thick Ti films evaporated onto thermally cleaned NaCl substrates. Unimplanted and N-implanted Ti films were examined by transmission electron microscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. It was revealed that N-implantation expands the h.c.p. Ti lattice and reduces the hydrogen concentration in the evaporated Ti film. The former induces the h.c.p.-f.c.c. transformation and then leads to the growth of (001) oriented TiNy by occupation of the octahedral sites in the f.c.c. Ti sublattice by N. The latter indicates the escape of H from TiHx and leads to the growth of (110) oriented TiNy by the similar occupation by N.

KW - Epitaxy

KW - Nitrogen implantation

KW - Rutherford backscattering spectrometry

KW - Titanium nitride

KW - Transmission electron microscopy (TEM)

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U2 - 10.1016/0040-6090(96)08568-9

DO - 10.1016/0040-6090(96)08568-9

M3 - Article

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VL - 281-282

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EP - 35

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -

Epitaxy of titanium nitride thin films grown by nitrogen implantation

Abstract

Keywords

ASJC Scopus subject areas

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