Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs

GaAs-based diluted magnetic semiconductor, (Ga, Mn)As, with Mn composition x up to 0.07 was prepared by molecular-beam epitaxy on GaAs substrate at temperatures ranging from 160 to 320°C. Clear reflection high-energy electron diffraction oscillations were observed at the initial growth stage, indicating that the growth mode is two-dimensional. The lattice constant of (Ga, Mn)As films determined by X-ray diffraction showed a linear increase with the increase of Mn composition. Well-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements also revealed the presence of ferromagnetic order in the (Ga, Mn)As layer. The easy axis of magnetization can be reversed by changing the strain direction in (Ga, Mn)As. GaAs/(Ga, Mn)As superlattice structures with high crystal perfection and good interface quality were also prepared.