TY - JOUR
T1 - Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs
AU - Shen, A.
AU - Ohno, H.
AU - Matsukura, F.
AU - Sugawara, Y.
AU - Akiba, N.
AU - Kuroiwa, T.
AU - Oiwa, A.
AU - Endo, A.
AU - Katsumoto, S.
AU - Iye, Y.
N1 - Funding Information:
This work was partly supported by a Grant-in-Aid for the Scientific Research from the Ministry of Education, Science, Sports, and Culture, Japan. The partial support from the Mitsubishi Foundation is also acknowledged. The authors thank Professor Y. Horikoshi at Waseda University for the discussion about the RHEED oscillation results of LT GaAs. We also thank Professor H. Takagi at University of Tokyo for his help in magnetization measurements. One of the authors (A.S.) acknowledges JSPS for awarding him the fellowship to conduct research in Japan.
PY - 1997/5
Y1 - 1997/5
N2 - GaAs-based diluted magnetic semiconductor, (Ga, Mn)As, with Mn composition x up to 0.07 was prepared by molecular-beam epitaxy on GaAs substrate at temperatures ranging from 160 to 320°C. Clear reflection high-energy electron diffraction oscillations were observed at the initial growth stage, indicating that the growth mode is two-dimensional. The lattice constant of (Ga, Mn)As films determined by X-ray diffraction showed a linear increase with the increase of Mn composition. Well-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements also revealed the presence of ferromagnetic order in the (Ga, Mn)As layer. The easy axis of magnetization can be reversed by changing the strain direction in (Ga, Mn)As. GaAs/(Ga, Mn)As superlattice structures with high crystal perfection and good interface quality were also prepared.
AB - GaAs-based diluted magnetic semiconductor, (Ga, Mn)As, with Mn composition x up to 0.07 was prepared by molecular-beam epitaxy on GaAs substrate at temperatures ranging from 160 to 320°C. Clear reflection high-energy electron diffraction oscillations were observed at the initial growth stage, indicating that the growth mode is two-dimensional. The lattice constant of (Ga, Mn)As films determined by X-ray diffraction showed a linear increase with the increase of Mn composition. Well-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements also revealed the presence of ferromagnetic order in the (Ga, Mn)As layer. The easy axis of magnetization can be reversed by changing the strain direction in (Ga, Mn)As. GaAs/(Ga, Mn)As superlattice structures with high crystal perfection and good interface quality were also prepared.
KW - Diluted magnetic semiconductors
KW - Ferromagnetic order
KW - III-V compounds
KW - Magnetic anisotropy
KW - Molecular-beam epitaxy
KW - Superlattice
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U2 - 10.1016/S0022-0248(96)00967-0
DO - 10.1016/S0022-0248(96)00967-0
M3 - Article
AN - SCOPUS:0031147613
VL - 175-176
SP - 1069
EP - 1074
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - PART 2
ER -