Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures

A. Shen; F. Matsukura; Y. Sugawara; T. Kuroiwa; H. Ohno; A. Oiwa; A. Endo; S. Katsumoto; Y. Iye

doi:10.1016/S0169-4332(96)00865-3

Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures

A. Shen, F. Matsukura, Y. Sugawara, T. Kuroiwa, H. Ohno, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

InMnAs/AlGaSb diluted magnetic semiconductor heterostructures have been grown by molecular-beam epitaxy on GaAs substrates. Three epitaxial procedures were employed for the growth of InMnAs, which resulted in three-dimensional or two-dimensional nucleation. Low-temperature magnetotransport measurements reveal that while some of the samples show well-aligned ferromagnetic ordering some others show ferromagnetic behavior with no magnetic anisotropy or, in the extreme case, superparamagnetic behavior. The transport properties were correlated to the growth modes.

Original language	English
Pages (from-to)	183-188
Number of pages	6
Journal	Applied Surface Science
Volume	113-114
DOIs	https://doi.org/10.1016/S0169-4332(96)00865-3
Publication status	Published - 1997 Apr

Keywords

Diluted magnetic semiconductors
Ferromagnetic order
III-V compounds
Magnetic anisotropy
Molecular-beam epitaxy
Superparamagnetism

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures",

abstract = "InMnAs/AlGaSb diluted magnetic semiconductor heterostructures have been grown by molecular-beam epitaxy on GaAs substrates. Three epitaxial procedures were employed for the growth of InMnAs, which resulted in three-dimensional or two-dimensional nucleation. Low-temperature magnetotransport measurements reveal that while some of the samples show well-aligned ferromagnetic ordering some others show ferromagnetic behavior with no magnetic anisotropy or, in the extreme case, superparamagnetic behavior. The transport properties were correlated to the growth modes.",

keywords = "Diluted magnetic semiconductors, Ferromagnetic order, III-V compounds, Magnetic anisotropy, Molecular-beam epitaxy, Superparamagnetism",

author = "A. Shen and F. Matsukura and Y. Sugawara and T. Kuroiwa and H. Ohno and A. Oiwa and A. Endo and S. Katsumoto and Y. Iye",

year = "1997",

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T1 - Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures

AU - Shen, A.

AU - Matsukura, F.

AU - Sugawara, Y.

AU - Kuroiwa, T.

AU - Ohno, H.

AU - Oiwa, A.

AU - Endo, A.

AU - Katsumoto, S.

AU - Iye, Y.

PY - 1997/4

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AB - InMnAs/AlGaSb diluted magnetic semiconductor heterostructures have been grown by molecular-beam epitaxy on GaAs substrates. Three epitaxial procedures were employed for the growth of InMnAs, which resulted in three-dimensional or two-dimensional nucleation. Low-temperature magnetotransport measurements reveal that while some of the samples show well-aligned ferromagnetic ordering some others show ferromagnetic behavior with no magnetic anisotropy or, in the extreme case, superparamagnetic behavior. The transport properties were correlated to the growth modes.

KW - Diluted magnetic semiconductors

KW - Ferromagnetic order

KW - III-V compounds

KW - Magnetic anisotropy

KW - Molecular-beam epitaxy

KW - Superparamagnetism

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