Epitaxially grown n-ZnOMgOTiN n+ -Si (111) heterostructured light-emitting diode

X. W. Sun, J. L. Zhao, S. T. Tan, L. H. Tan, C. H. Tung, G. Q. Lo, D. L. Kwong, Y. W. Zhang, X. M. Li, K. L. Teo

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47 Citations (Scopus)


Epitaxial n-ZnOMgOTiN n+ -Si heterostructured light-emitting diodes have been fabricated. The epitaxial growth of MgOTiN on Si(111) was established by pulsed laser deposition, which was further employed as a buffer layer for epitaxial growth of ZnO layer by metal-organic chemical-vapor deposition. Good epitaxial quality was found using high-resolution x-ray diffraction and transmission electron microscopy. A strong wide electroluminescence band, ranging from 350 to 850 nm and centered at ∼530 nm, was observed from the diode when a positive voltage was applied on Si substrate. The diode exhibited a linear light-output-current characteristic with an injection current up to 192 mA.

Original languageEnglish
Article number111113
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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