Epitaxial Y-Ba-Cu-O films on Si with intermediate layer by rf magnetron sputtering

S. Miura, T. Yoshitake, S. Matsubara, Y. Miyasaka, N. Shohata, T. Satoh

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Abstract

Epitaxial films of Y-Ba-Cu-O were obtained on a Si substrate, using an epitaxial intermediate layer consisting of BaTiO3(or SrTiO 3)/MgAl2O4. MgAl2O4 was epitaxially grown on the Si(100) substrate by chemical vapor deposition. Then, SrTiO3 or BaTiO3 was also epitaxially grown on the MgAl2O4 layer by means of rf magnetron sputtering. Epitaxial Y-Ba-Cu-O films were prepared on BaTiO3(SrTiO 3)/MgAl2O4/Si substrates by rf magnetron sputtering. Preparation of an Y-Ba-Cu-O film directly on MgAl2O 4/Si was also studied, but only a randomly oriented polycrystalline film has been obtained so far. Resistive superconducting transitions with zero resistance at 65 K on SrTiO3/MgAl2O4/Si and at 70 K on BaTiO3/MgAl2O4/Si were observed.

Original languageEnglish
Pages (from-to)1967-1969
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number20
DOIs
Publication statusPublished - 1988 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Miura, S., Yoshitake, T., Matsubara, S., Miyasaka, Y., Shohata, N., & Satoh, T. (1988). Epitaxial Y-Ba-Cu-O films on Si with intermediate layer by rf magnetron sputtering. Applied Physics Letters, 53(20), 1967-1969. https://doi.org/10.1063/1.100488