Epitaxial ScAlMg O4 (0001) films grown on sapphire substrates by flux-mediated epitaxy

T. Obata, R. Takahashi, I. Ohkubo, M. Oshima, K. Nakajima, T. Chikyow, H. Koinuma, Y. Matsumoto

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8 Citations (Scopus)

Abstract

ScAlMg O4 (0001) epitaxial films have been synthesized on sapphire (0001) substrates by flux-mediated epitaxy. The key points were high temperature deposition and the use of additive Bi Ox, which was simultaneously supplied during the deposition; otherwise the growth of spinel phase such as Mg Al2 O4 was dominant. The Bi Ox is thus considered to promote the growth of ScAlMg O4 like a flux. This result indicates that the flux-mediated epitaxy is a promising way to high quality single crystal ScAlMg O4 films as a lattice-matched substrate for p -type ZnO and GaN films.

Original languageEnglish
Article number191910
JournalApplied Physics Letters
Volume89
Issue number19
DOIs
Publication statusPublished - 2006 Nov 16
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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