Epitaxial relations between in situ superconducting YBa2Cu 3O7-x thin films and BaTiO3/MgAl 2O4/Si substrates

D. M. Hwang; R. Ramesh; C. Y. Chen; X. D. Wu; A. Inam; M. S. Hegde; B. Wilkens; C. C. Chang; L. Nazar; T. Venkatesan; S. Miura; S. Matsubara; Y. Miyasaka; N. Shohata

doi:10.1063/1.346607

Epitaxial relations between in situ superconducting YBa₂Cu ₃O₇-x thin films and BaTiO₃/MgAl ₂O₄/Si substrates

D. M. Hwang, R. Ramesh, C. Y. Chen, X. D. Wu, A. Inam, M. S. Hegde, B. Wilkens, C. C. Chang, L. Nazar, T. Venkatesan, S. Miura, S. Matsubara, Y. Miyasaka, N. Shohata

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Abstract

In situ superconducting YBa₂Cu₃O_7-x films with T_c0 up to 87 K and J_c, 77 K up to 6×10 ⁴ A/cm² were prepared on Si substrates with MgAl ₂O₄ and BaTiO₃ double-buffer layers. The epitaxial relations between various layers were established by transmission electron microscopy. The MgAl₂O₄ layer is heavily faulted. The subsequent BaTiO₃ layer stops most of the faults, provides a template for the YBa₂Cu₃O_7-x growth, and partially screens off the stress due to different thermal expansion coefficients. The microstructure of the YBa₂Cu₃O _7-x layer is very similar to that of the films deposited directly on SrTiO₃, exhibiting a homogeneous heavily faulted single-crystal-like structure free from secondary phases and grain boundaries. The slight degradation of the transport properties is attributed to residual thermal stress.

Original language	English
Pages (from-to)	1772-1776
Number of pages	5
Journal	Journal of Applied Physics
Volume	68
Issue number	4
DOIs	https://doi.org/10.1063/1.346607
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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Hwang, D. M., Ramesh, R., Chen, C. Y., Wu, X. D., Inam, A., Hegde, M. S., Wilkens, B., Chang, C. C., Nazar, L., Venkatesan, T., Miura, S., Matsubara, S., Miyasaka, Y., & Shohata, N. (1990). Epitaxial relations between in situ superconducting YBa₂Cu ₃O₇-x thin films and BaTiO₃/MgAl ₂O₄/Si substrates. Journal of Applied Physics, 68(4), 1772-1776. https://doi.org/10.1063/1.346607

Epitaxial relations between in situ superconducting YBa₂Cu ₃O₇-x thin films and BaTiO₃/MgAl ₂O₄/Si substrates. / Hwang, D. M.; Ramesh, R.; Chen, C. Y.; Wu, X. D.; Inam, A.; Hegde, M. S.; Wilkens, B.; Chang, C. C.; Nazar, L.; Venkatesan, T.; Miura, S.; Matsubara, S.; Miyasaka, Y.; Shohata, N.

In: Journal of Applied Physics, Vol. 68, No. 4, 1990, p. 1772-1776.

Research output: Contribution to journal › Article › peer-review

Hwang, D. M. ; Ramesh, R. ; Chen, C. Y. ; Wu, X. D. ; Inam, A. ; Hegde, M. S. ; Wilkens, B. ; Chang, C. C. ; Nazar, L. ; Venkatesan, T. ; Miura, S. ; Matsubara, S. ; Miyasaka, Y. ; Shohata, N. / Epitaxial relations between in situ superconducting YBa₂Cu ₃O₇-x thin films and BaTiO₃/MgAl ₂O₄/Si substrates. In: Journal of Applied Physics. 1990 ; Vol. 68, No. 4. pp. 1772-1776.

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title = "Epitaxial relations between in situ superconducting YBa2Cu 3O7-x thin films and BaTiO3/MgAl 2O4/Si substrates",

abstract = "In situ superconducting YBa2Cu3O7-x films with Tc0 up to 87 K and Jc, 77 K up to 6×10 4 A/cm2 were prepared on Si substrates with MgAl 2O4 and BaTiO3 double-buffer layers. The epitaxial relations between various layers were established by transmission electron microscopy. The MgAl2O4 layer is heavily faulted. The subsequent BaTiO3 layer stops most of the faults, provides a template for the YBa2Cu3O7-x growth, and partially screens off the stress due to different thermal expansion coefficients. The microstructure of the YBa2Cu3O 7-x layer is very similar to that of the films deposited directly on SrTiO3, exhibiting a homogeneous heavily faulted single-crystal-like structure free from secondary phases and grain boundaries. The slight degradation of the transport properties is attributed to residual thermal stress.",

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doi = "10.1063/1.346607",

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AU - Hwang, D. M.

AU - Ramesh, R.

AU - Chen, C. Y.

AU - Wu, X. D.

AU - Inam, A.

AU - Hegde, M. S.

AU - Wilkens, B.

AU - Chang, C. C.

AU - Nazar, L.

AU - Venkatesan, T.

AU - Miura, S.

AU - Matsubara, S.

AU - Miyasaka, Y.

AU - Shohata, N.

PY - 1990

Y1 - 1990

N2 - In situ superconducting YBa2Cu3O7-x films with Tc0 up to 87 K and Jc, 77 K up to 6×10 4 A/cm2 were prepared on Si substrates with MgAl 2O4 and BaTiO3 double-buffer layers. The epitaxial relations between various layers were established by transmission electron microscopy. The MgAl2O4 layer is heavily faulted. The subsequent BaTiO3 layer stops most of the faults, provides a template for the YBa2Cu3O7-x growth, and partially screens off the stress due to different thermal expansion coefficients. The microstructure of the YBa2Cu3O 7-x layer is very similar to that of the films deposited directly on SrTiO3, exhibiting a homogeneous heavily faulted single-crystal-like structure free from secondary phases and grain boundaries. The slight degradation of the transport properties is attributed to residual thermal stress.

AB - In situ superconducting YBa2Cu3O7-x films with Tc0 up to 87 K and Jc, 77 K up to 6×10 4 A/cm2 were prepared on Si substrates with MgAl 2O4 and BaTiO3 double-buffer layers. The epitaxial relations between various layers were established by transmission electron microscopy. The MgAl2O4 layer is heavily faulted. The subsequent BaTiO3 layer stops most of the faults, provides a template for the YBa2Cu3O7-x growth, and partially screens off the stress due to different thermal expansion coefficients. The microstructure of the YBa2Cu3O 7-x layer is very similar to that of the films deposited directly on SrTiO3, exhibiting a homogeneous heavily faulted single-crystal-like structure free from secondary phases and grain boundaries. The slight degradation of the transport properties is attributed to residual thermal stress.

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Epitaxial relations between in situ superconducting YBa₂Cu ₃O₇-x thin films and BaTiO₃/MgAl ₂O₄/Si substrates

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