Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(1 1 1) substrate

Gen Sazaki, Takuho Fujino, Jerzy T. Sadowski, Noritaka Usami, Toru Ujihara, Kozo Fujiwara, Yukio Takahashi, Eiichiro Matsubara, Toshio Sakurai, Kazuo Nakajima

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Surface of an off-cut Si(1 1 1) substrate with an average step distance of 100Å was terminated with monohydride. On this substrate, thin film crystals of organic semiconductor PTCDA were grown by molecular beam epitaxy (MBE). Surface of the thin film crystals on the hydrogen-terminated Si(1 1 1) surface (H-Si(1 1 1)) were observed using ultra-high vacuum scanning tunneling microscopy (UHV-STM) and atomic force microscopy (AFM). The PTCDA thin film crystals had an island shape of Volmer-Weber type. From the direction of the vicinal steps of the substrate [11̄0], we determined the size and orientation of the PTCDA thin film crystals on the H-Si(1 1 1). Long-axis of the two-dimensional (2D) unit cell of the thin film crystals matches the vector (6, 2) of the H-Si(111) surface. We proposed two conceivable epitaxial relations: one is 622/311/3 and the other is point-on-line coincidence. 2D unit cells of the thin film crystals have widely stretched structure (2-10%), and the island growth of Volmer-Weber type is probably due to this large lattice misfit.

Original languageEnglish
Pages (from-to)196-201
Number of pages6
JournalJournal of Crystal Growth
Volume262
Issue number1-4
DOIs
Publication statusPublished - 2004 Feb 15

Keywords

  • A1. Epitaxial structure
  • A3. Hydrogen-terminated Si(1 1 1)
  • A3. Molecular beam epitaxy
  • B2. Organic semiconductor
  • B2. PTCDA

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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