Abstract
New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (GdxNd1 - x)2O3 (GNO), a multi-component material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices.
Original language | English |
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Pages (from-to) | 866-868 |
Number of pages | 3 |
Journal | Materials Letters |
Volume | 64 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2010 Apr 15 |
Keywords
- Crystal growth
- Electronic materials
- Nanomaterials
- Thin films
- X-ray techniques
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials