Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si

Jinxing Wang, Tianmo Liu, Zhongchang Wang, Eberhard Bugiel, Apurba Laha, Tatsuro Watahiki, Roman Shayduk, Wolfgang Braun, Andreas Fissel, Hans Jörg Osten

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)

    Abstract

    New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (GdxNd1 - x)2O3 (GNO), a multi-component material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices.

    Original languageEnglish
    Pages (from-to)866-868
    Number of pages3
    JournalMaterials Letters
    Volume64
    Issue number7
    DOIs
    Publication statusPublished - 2010 Apr 15

    Keywords

    • Crystal growth
    • Electronic materials
    • Nanomaterials
    • Thin films
    • X-ray techniques

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanical Engineering
    • Mechanics of Materials

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