Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si

Jinxing Wang; Tianmo Liu; Zhongchang Wang; Eberhard Bugiel; Apurba Laha; Tatsuro Watahiki; Roman Shayduk; Wolfgang Braun; Andreas Fissel; Hans Jörg Osten

doi:10.1016/j.matlet.2010.01.045

Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si

Jinxing Wang, Tianmo Liu, Zhongchang Wang, Eberhard Bugiel, Apurba Laha, Tatsuro Watahiki, Roman Shayduk, Wolfgang Braun, Andreas Fissel, Hans Jörg Osten

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (Gd_xNd_{1 - x})₂O₃ (GNO), a multi-component material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices.

Original language	English
Pages (from-to)	866-868
Number of pages	3
Journal	Materials Letters
Volume	64
Issue number	7
DOIs	https://doi.org/10.1016/j.matlet.2010.01.045
Publication status	Published - 2010 Apr 15

Keywords

Crystal growth
Electronic materials
Nanomaterials
Thin films
X-ray techniques

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanical Engineering
Mechanics of Materials

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10.1016/j.matlet.2010.01.045

Cite this

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title = "Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si",

abstract = "New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (GdxNd1 - x)2O3 (GNO), a multi-component material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices.",

keywords = "Crystal growth, Electronic materials, Nanomaterials, Thin films, X-ray techniques",

author = "Jinxing Wang and Tianmo Liu and Zhongchang Wang and Eberhard Bugiel and Apurba Laha and Tatsuro Watahiki and Roman Shayduk and Wolfgang Braun and Andreas Fissel and Osten, {Hans J{\"o}rg}",

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T2 - A high-k material with ultralow mismatch to Si

AU - Wang, Jinxing

AU - Liu, Tianmo

AU - Wang, Zhongchang

AU - Bugiel, Eberhard

AU - Laha, Apurba

AU - Watahiki, Tatsuro

AU - Shayduk, Roman

AU - Braun, Wolfgang

AU - Fissel, Andreas

AU - Osten, Hans Jörg

PY - 2010/4/15

Y1 - 2010/4/15

N2 - New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (GdxNd1 - x)2O3 (GNO), a multi-component material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices.

AB - New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (GdxNd1 - x)2O3 (GNO), a multi-component material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices.

KW - Crystal growth

KW - Electronic materials

KW - Nanomaterials

KW - Thin films

KW - X-ray techniques

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JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

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Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si

Abstract

Keywords

ASJC Scopus subject areas

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