Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3substrates

Tomohiro Yamaguchi, Tomohiro Yamaguchi, Hiroki Nagai, Hiroki Nagai, Takanori Kiguchi, Nao Wakabayashi, Takuto Igawa, Toshimi Hitora, Takeyoshi Onuma, Takeyoshi Onuma, Tohru Honda, Tohru Honda, Mitsunobu Sato, Mitsunobu Sato

Research output: Contribution to journalArticlepeer-review

Abstract

Epitaxial growth of Cu3N films on (0001)α-Al2O3 substrates was performed by mist chemical vapor deposition. As a source solution, 0.10 mol l-1 of copper (II) acetylacetonate dissolved in 28% aqueous ammonia was used. Even though an aqueous solution was used as the source solution, the epitaxial Cu3N film was realized without the incorporation of CuO and Cu2O phases in the growth of 300 °C. The film was also found to have limited O incorporation from the results of scanning transmission electron microscopy and Rutherford back-scattering spectroscopy. The optical property of the Cu3N film was also investigated.

Original languageEnglish
Article number075505
JournalApplied Physics Express
Volume13
Issue number7
DOIs
Publication statusPublished - 2020 Jul 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Epitaxial mist chemical vapor deposition growth and characterization of Cu<sub>3</sub>N films on (0001)α-Al<sub>2</sub>O<sub>3</sub>substrates'. Together they form a unique fingerprint.

Cite this