Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (0 0 1), (1 1 1)A,B and (1 1 0) surfaces

Toshio Kochiya, Yutaka Oyama, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The epitaxial lateral overgrowth (ELO) was performed on {001}, {111}A,B and {110} oriented InP by liquid-phase epitaxy at constant growth temperature (450-650°C). According to the observations of cross-sectional shape, the orientation dependence of the vertical growth rate was determined to be {110}<{111}A,B>{100} under the present experimental conditions. The etch pit density in the ELO layer was lower than on openings. In PL mapping observations, PL properties were improved on the ELO layer.

Original languageEnglish
Pages (from-to)465-468
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume6
Issue number5-6
DOIs
Publication statusPublished - 2003 Oct 1

Keywords

  • Epitaxial lateral overgrowth
  • Etch pit distribution
  • InP
  • Liquid-phase epitaxy
  • PL mapping

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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