TY - JOUR
T1 - Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) si micro channel areas
AU - Hoshii, Takuya
AU - Deura, Momoko
AU - Sugiyama, Masakazu
AU - Nakane, Ryosho
AU - Sugahara, Satoshi
AU - Takenaka, Mitsuru
AU - Nakano, Yoshiaki
AU - Takagi, Shinichi
PY - 2008/12/1
Y1 - 2008/12/1
N2 - In this paper, we demonstrate that micro selective area growth (μSAG) is effective in improving the crystal quality of In-GaAs on (111) Si through the decrease in the number of the nuclei on a selective growth Si area. It is found that smaller selective areas are better in the morphology of the epitaxial films, while the pitch of selective areas yields a trade-off relationship between the selectivity and the lateral growth length. It is demonstrated that InGaAs films with good morphology and large lateral growth areas have been obtained by μSAG on (111) Si dot areas with the diameter of 2 μm and the pitch of 5 μm using metal-organic vapor phase epitaxy (MOVPE). This result suggests that μSAG using MOVPE is a promising technique for III-V-On-Insulator structures on Si substrates.
AB - In this paper, we demonstrate that micro selective area growth (μSAG) is effective in improving the crystal quality of In-GaAs on (111) Si through the decrease in the number of the nuclei on a selective growth Si area. It is found that smaller selective areas are better in the morphology of the epitaxial films, while the pitch of selective areas yields a trade-off relationship between the selectivity and the lateral growth length. It is demonstrated that InGaAs films with good morphology and large lateral growth areas have been obtained by μSAG on (111) Si dot areas with the diameter of 2 μm and the pitch of 5 μm using metal-organic vapor phase epitaxy (MOVPE). This result suggests that μSAG using MOVPE is a promising technique for III-V-On-Insulator structures on Si substrates.
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U2 - 10.1002/pssc.200779309
DO - 10.1002/pssc.200779309
M3 - Conference article
AN - SCOPUS:56249135313
VL - 5
SP - 2733
EP - 2735
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - 9
T2 - 34th International Symposium on Compound Semiconductors, ISCS-2007
Y2 - 15 October 2007 through 18 October 2007
ER -