Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) si micro channel areas

Takuya Hoshii, Momoko Deura, Masakazu Sugiyama, Ryosho Nakane, Satoshi Sugahara, Mitsuru Takenaka, Yoshiaki Nakano, Shinichi Takagi

Research output: Contribution to journalConference articlepeer-review

36 Citations (Scopus)


In this paper, we demonstrate that micro selective area growth (μSAG) is effective in improving the crystal quality of In-GaAs on (111) Si through the decrease in the number of the nuclei on a selective growth Si area. It is found that smaller selective areas are better in the morphology of the epitaxial films, while the pitch of selective areas yields a trade-off relationship between the selectivity and the lateral growth length. It is demonstrated that InGaAs films with good morphology and large lateral growth areas have been obtained by μSAG on (111) Si dot areas with the diameter of 2 μm and the pitch of 5 μm using metal-organic vapor phase epitaxy (MOVPE). This result suggests that μSAG using MOVPE is a promising technique for III-V-On-Insulator structures on Si substrates.

Original languageEnglish
Pages (from-to)2733-2735
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number9
Publication statusPublished - 2008 Dec 1
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 2007 Oct 152007 Oct 18

ASJC Scopus subject areas

  • Condensed Matter Physics


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