In this paper, we demonstrate that micro selective area growth (μSAG) is effective in improving the crystal quality of In-GaAs on (111) Si through the decrease in the number of the nuclei on a selective growth Si area. It is found that smaller selective areas are better in the morphology of the epitaxial films, while the pitch of selective areas yields a trade-off relationship between the selectivity and the lateral growth length. It is demonstrated that InGaAs films with good morphology and large lateral growth areas have been obtained by μSAG on (111) Si dot areas with the diameter of 2 μm and the pitch of 5 μm using metal-organic vapor phase epitaxy (MOVPE). This result suggests that μSAG using MOVPE is a promising technique for III-V-On-Insulator structures on Si substrates.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2008 Dec 1|
|Event||34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan|
Duration: 2007 Oct 15 → 2007 Oct 18
ASJC Scopus subject areas
- Condensed Matter Physics