Epitaxial L10-MnAl Thin Films with High Perpendicular Magnetic Anisotropy and Small Surface Roughness

Most Shahnaz Parvin, Mikihiko Ogane, Miho Kubota, Masakiyo Tsunoda, Yasuo Ando

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

L10-ordered MnAl thin films were epitaxially grown by sputtering technique. The substrate and annealing temperature dependences of the structural and magnetic properties of the films were systematically investigated to improve the magnetic properties and surface roughness. A low substrate temperature and subsequent post-annealing are the useful process to obtain MnAl films with both high magnetic anisotropy K u and small surface roughness R a. We have successfully fabricated MnAl thin films deposited on MgO substrates and Cr90Ru10 buffer layers with the very high K u of 13 Merg/cm3, relatively small magnetization of 500 eμcm3, and small R a of 0.34 nm by optimization of the substrate and post-annealing temperatures. The obtained MnAl films will be greatly useful to realize the high-density spin-transfer-torque magnetic random access memory.

Original languageEnglish
Article number8370799
JournalIEEE Transactions on Magnetics
Volume54
Issue number11
DOIs
Publication statusPublished - 2018 Nov 1

Keywords

  • L1-ordered MnAl
  • perpendicular magnetic anisotropy (PMA)
  • spin-transfer-torque magnetic random access memory (STT-MRAM)
  • tunnel magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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