TY - JOUR
T1 - Epitaxial iron oxide nanocrystals with memory function grown on Si substrates
AU - Ishibe, Takafumi
AU - Matsui, Hideki
AU - Watanabe, Kentaro
AU - Takeuchi, Shotaro
AU - Sakai, Akira
AU - Nakamura, Yoshiaki
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/5
Y1 - 2016/5
N2 - High-density Fe3O4-δ nanocrystals (NCs) were epitaxially grown on Si substrates by molecular beam epitaxy with epitaxial Ge NCs being used as nucleation sites. Scanning tunneling spectroscopy measurements showed that the surface bandgap of the as-grown Fe3O4-δ NCs was ~0.2 eV, consistent with that reported for Fe3O4-δ films. Conductive atomic force microscopy measurements of the NCs revealed hysteresis in the voltage- current curves, indicating bipolar resistive switching behavior. The measurement results established the superiority of the NCs to thin conventional polycrystalline Fe3O4-δ films/Si in terms of resistive switching characteristics. This demonstrated the possibility of developing resistance random access memory devices composed of ubiquitous Fe3O4-δ NC materials.
AB - High-density Fe3O4-δ nanocrystals (NCs) were epitaxially grown on Si substrates by molecular beam epitaxy with epitaxial Ge NCs being used as nucleation sites. Scanning tunneling spectroscopy measurements showed that the surface bandgap of the as-grown Fe3O4-δ NCs was ~0.2 eV, consistent with that reported for Fe3O4-δ films. Conductive atomic force microscopy measurements of the NCs revealed hysteresis in the voltage- current curves, indicating bipolar resistive switching behavior. The measurement results established the superiority of the NCs to thin conventional polycrystalline Fe3O4-δ films/Si in terms of resistive switching characteristics. This demonstrated the possibility of developing resistance random access memory devices composed of ubiquitous Fe3O4-δ NC materials.
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U2 - 10.7567/APEX.9.055508
DO - 10.7567/APEX.9.055508
M3 - Article
AN - SCOPUS:84964938509
VL - 9
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 5
M1 - 055508
ER -