TY - JOUR
T1 - Epitaxial insulator for bottom-gate field-effect devices based on TiO2
AU - Katayama, Masao
AU - Koinuma, Hideomi
AU - Matsumoto, Yuji
N1 - Funding Information:
This work was supported by CREST project from the Japan Science and Technology Agency, and partially supported by Grant-in-Aid from the Ministry of Education, Culture, Sports, Science and Technology of Japan (No. 17656115 and No. 18750179).
PY - 2008/2/25
Y1 - 2008/2/25
N2 - Field-effect devices with bottom-gate structure based on anatase TiO2 active channels were fabricated. The key factor to achieve this was the quality of epitaxial insulator layers, viz.; the insulating property and their crystallinity, because they work not only as a well insulator for field-effect devices but also as a template for the subsequent growth of epitaxial active layers. Our devices showed typical transistor actions. On-to-off current ratio exceeded 104 and the field effect mobility of 0.04 cm2/V s were obtained. Interestingly, the device characteristics were found to be sensitive to ambient and light, suggesting their potential for manipulating the fruitful TiO2 surface functions by tuning the gate voltage.
AB - Field-effect devices with bottom-gate structure based on anatase TiO2 active channels were fabricated. The key factor to achieve this was the quality of epitaxial insulator layers, viz.; the insulating property and their crystallinity, because they work not only as a well insulator for field-effect devices but also as a template for the subsequent growth of epitaxial active layers. Our devices showed typical transistor actions. On-to-off current ratio exceeded 104 and the field effect mobility of 0.04 cm2/V s were obtained. Interestingly, the device characteristics were found to be sensitive to ambient and light, suggesting their potential for manipulating the fruitful TiO2 surface functions by tuning the gate voltage.
KW - Electric field effect
KW - Epitaxy of thin film
KW - Titanium dioxide
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U2 - 10.1016/j.mseb.2007.09.050
DO - 10.1016/j.mseb.2007.09.050
M3 - Article
AN - SCOPUS:38949212465
VL - 148
SP - 19
EP - 21
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 1-3
ER -