Epitaxial insulator for bottom-gate field-effect devices based on TiO2

Masao Katayama, Hideomi Koinuma, Yuji Matsumoto

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Field-effect devices with bottom-gate structure based on anatase TiO2 active channels were fabricated. The key factor to achieve this was the quality of epitaxial insulator layers, viz.; the insulating property and their crystallinity, because they work not only as a well insulator for field-effect devices but also as a template for the subsequent growth of epitaxial active layers. Our devices showed typical transistor actions. On-to-off current ratio exceeded 104 and the field effect mobility of 0.04 cm2/V s were obtained. Interestingly, the device characteristics were found to be sensitive to ambient and light, suggesting their potential for manipulating the fruitful TiO2 surface functions by tuning the gate voltage.

Original languageEnglish
Pages (from-to)19-21
Number of pages3
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume148
Issue number1-3
DOIs
Publication statusPublished - 2008 Feb 25
Externally publishedYes

Keywords

  • Electric field effect
  • Epitaxy of thin film
  • Titanium dioxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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