Abstract
Epitaxial films of Y-Ba-Cu-O were prepared on Si(100) substrates, using epitaxial intermediate layers consisting of BaTiO3(or SrTiO3)/MgAl2O4. MgAl2O4 was epitaxially grown on the Si substrate by chemical vapor deposition. Then, SrTiO3 or BaTiO3 was epitaxially grown on the MgAl2O4 layer by means of rf magnetron sputtering. Epitaxial Y-Ba-Cu-O films were finally deposited on BaTiO3(SrTiO3)/MgAl2O4/Si substrates by laser ablation and rf magnetron sputtering. The film prepared by laser ablation on BaTiO3/MgAl2O4/Si showed a zero resistance temperature of 86 K and a critical current density of 1.2 ϗ 105A/cm2 at 73 K.
Original language | English |
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Pages (from-to) | 101-108 |
Number of pages | 8 |
Journal | Phase Transitions |
Volume | 41 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1993 Jan 1 |
Externally published | Yes |
Keywords
- Y-Ba-Cu-O
- epitaxial growth
- on Si
- thin film
ASJC Scopus subject areas
- Instrumentation
- Materials Science(all)