Epitaxial high-Tc superconducting thin films on Si with intermediate layers

S. Miura, T. Yoshitake, T. Satoh, N. Shohata, Y. Miyasaka, H. Tsuge

Research output: Contribution to journalArticlepeer-review


Epitaxial films of Y-Ba-Cu-O were prepared on Si(100) substrates, using epitaxial intermediate layers consisting of BaTiO3(or SrTiO3)/MgAl2O4. MgAl2O4 was epitaxially grown on the Si substrate by chemical vapor deposition. Then, SrTiO3 or BaTiO3 was epitaxially grown on the MgAl2O4 layer by means of rf magnetron sputtering. Epitaxial Y-Ba-Cu-O films were finally deposited on BaTiO3(SrTiO3)/MgAl2O4/Si substrates by laser ablation and rf magnetron sputtering. The film prepared by laser ablation on BaTiO3/MgAl2O4/Si showed a zero resistance temperature of 86 K and a critical current density of 1.2 ϗ 105A/cm2 at 73 K.

Original languageEnglish
Pages (from-to)101-108
Number of pages8
JournalPhase Transitions
Issue number1-4
Publication statusPublished - 1993 Jan 1
Externally publishedYes


  • Y-Ba-Cu-O
  • epitaxial growth
  • on Si
  • thin film

ASJC Scopus subject areas

  • Instrumentation
  • Materials Science(all)


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