Epitaxial high-Tc superconducting thin films on Si with intermediate layers

S. Miura; T. Yoshitake; T. Satoh; N. Shohata; Y. Miyasaka; H. Tsuge

doi:10.1080/01411599308207764

Epitaxial high-T_c superconducting thin films on Si with intermediate layers

S. Miura, T. Yoshitake, T. Satoh, N. Shohata, Y. Miyasaka, H. Tsuge

Research output: Contribution to journal › Article › peer-review

Abstract

Epitaxial films of Y-Ba-Cu-O were prepared on Si(100) substrates, using epitaxial intermediate layers consisting of BaTiO₃(or SrTiO₃)/MgAl₂O₄. MgAl₂O₄ was epitaxially grown on the Si substrate by chemical vapor deposition. Then, SrTiO₃ or BaTiO₃ was epitaxially grown on the MgAl₂O₄ layer by means of rf magnetron sputtering. Epitaxial Y-Ba-Cu-O films were finally deposited on BaTiO₃(SrTiO₃)/MgAl₂O₄/Si substrates by laser ablation and rf magnetron sputtering. The film prepared by laser ablation on BaTiO₃/MgAl₂O₄/Si showed a zero resistance temperature of 86 K and a critical current density of 1.2 ϗ 10⁵A/cm² at 73 K.

Original language	English
Pages (from-to)	101-108
Number of pages	8
Journal	Phase Transitions
Volume	41
Issue number	1-4
DOIs	https://doi.org/10.1080/01411599308207764
Publication status	Published - 1993 Jan 1
Externally published	Yes

Keywords

Y-Ba-Cu-O
epitaxial growth
on Si
thin film

ASJC Scopus subject areas

Instrumentation
Materials Science(all)

Access to Document

10.1080/01411599308207764

Cite this

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title = "Epitaxial high-Tc superconducting thin films on Si with intermediate layers",

abstract = "Epitaxial films of Y-Ba-Cu-O were prepared on Si(100) substrates, using epitaxial intermediate layers consisting of BaTiO3(or SrTiO3)/MgAl2O4. MgAl2O4 was epitaxially grown on the Si substrate by chemical vapor deposition. Then, SrTiO3 or BaTiO3 was epitaxially grown on the MgAl2O4 layer by means of rf magnetron sputtering. Epitaxial Y-Ba-Cu-O films were finally deposited on BaTiO3(SrTiO3)/MgAl2O4/Si substrates by laser ablation and rf magnetron sputtering. The film prepared by laser ablation on BaTiO3/MgAl2O4/Si showed a zero resistance temperature of 86 K and a critical current density of 1.2 ϗ 105A/cm2 at 73 K.",

keywords = "Y-Ba-Cu-O, epitaxial growth, on Si, thin film",

author = "S. Miura and T. Yoshitake and T. Satoh and N. Shohata and Y. Miyasaka and H. Tsuge",

year = "1993",

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TY - JOUR

T1 - Epitaxial high-Tc superconducting thin films on Si with intermediate layers

AU - Miura, S.

AU - Yoshitake, T.

AU - Satoh, T.

AU - Shohata, N.

AU - Miyasaka, Y.

AU - Tsuge, H.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - Epitaxial films of Y-Ba-Cu-O were prepared on Si(100) substrates, using epitaxial intermediate layers consisting of BaTiO3(or SrTiO3)/MgAl2O4. MgAl2O4 was epitaxially grown on the Si substrate by chemical vapor deposition. Then, SrTiO3 or BaTiO3 was epitaxially grown on the MgAl2O4 layer by means of rf magnetron sputtering. Epitaxial Y-Ba-Cu-O films were finally deposited on BaTiO3(SrTiO3)/MgAl2O4/Si substrates by laser ablation and rf magnetron sputtering. The film prepared by laser ablation on BaTiO3/MgAl2O4/Si showed a zero resistance temperature of 86 K and a critical current density of 1.2 ϗ 105A/cm2 at 73 K.

AB - Epitaxial films of Y-Ba-Cu-O were prepared on Si(100) substrates, using epitaxial intermediate layers consisting of BaTiO3(or SrTiO3)/MgAl2O4. MgAl2O4 was epitaxially grown on the Si substrate by chemical vapor deposition. Then, SrTiO3 or BaTiO3 was epitaxially grown on the MgAl2O4 layer by means of rf magnetron sputtering. Epitaxial Y-Ba-Cu-O films were finally deposited on BaTiO3(SrTiO3)/MgAl2O4/Si substrates by laser ablation and rf magnetron sputtering. The film prepared by laser ablation on BaTiO3/MgAl2O4/Si showed a zero resistance temperature of 86 K and a critical current density of 1.2 ϗ 105A/cm2 at 73 K.

KW - Y-Ba-Cu-O

KW - epitaxial growth

KW - on Si

KW - thin film

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