Epitaxial growth study of (Ba1-xRbx)BiO3-8 films by ion beam sputtering

J. Fujita; T. Yoshitake; T. Satoh; H. Igarashi; I. Takeuchi; S. Miura; J. S. Tsai; H. Tsuge

doi:10.1016/0921-4534(91)91114-J

Epitaxial growth study of (Ba_1-xRb_x)BiO_3-8 films by ion beam sputtering

J. Fujita, T. Yoshitake, T. Satoh, H. Igarashi, I. Takeuchi, S. Miura, J. S. Tsai, H. Tsuge

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Epitaxial growth of (Ba_1-xRb_x)BiO_3-8 films was studied. Oxygen deficient atmosphere was appropriate for the epitaxial growth, while the effective oxidation by atomic oxygen during cooling down process was required in order to obtain d the as-grown superconductivity. Typical Tc, zero of the film was about 10K. The films had very smooth surface and the in-plane epitaxial relationship was <100>BRB//<110>SrTiO₃.

Original language	English
Pages (from-to)	1979-1980
Number of pages	2
Journal	Physica C: Superconductivity and its applications
Volume	185-189
Issue number	PART 3
DOIs	https://doi.org/10.1016/0921-4534(91)91114-J
Publication status	Published - 1991 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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@article{f8086d6236c74330b696c44c222958b8,

title = "Epitaxial growth study of (Ba1-xRbx)BiO3-8 films by ion beam sputtering",

abstract = "Epitaxial growth of (Ba1-xRbx)BiO3-8 films was studied. Oxygen deficient atmosphere was appropriate for the epitaxial growth, while the effective oxidation by atomic oxygen during cooling down process was required in order to obtain d the as-grown superconductivity. Typical Tc, zero of the film was about 10K. The films had very smooth surface and the in-plane epitaxial relationship was <100>BRB//<110>SrTiO3.",

author = "J. Fujita and T. Yoshitake and T. Satoh and H. Igarashi and I. Takeuchi and S. Miura and Tsai, {J. S.} and H. Tsuge",

year = "1991",

month = dec,

day = "1",

doi = "10.1016/0921-4534(91)91114-J",

language = "English",

volume = "185-189",

pages = "1979--1980",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

publisher = "Elsevier",

number = "PART 3",

}

TY - JOUR

T1 - Epitaxial growth study of (Ba1-xRbx)BiO3-8 films by ion beam sputtering

AU - Fujita, J.

AU - Yoshitake, T.

AU - Satoh, T.

AU - Igarashi, H.

AU - Takeuchi, I.

AU - Miura, S.

AU - Tsai, J. S.

AU - Tsuge, H.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - Epitaxial growth of (Ba1-xRbx)BiO3-8 films was studied. Oxygen deficient atmosphere was appropriate for the epitaxial growth, while the effective oxidation by atomic oxygen during cooling down process was required in order to obtain d the as-grown superconductivity. Typical Tc, zero of the film was about 10K. The films had very smooth surface and the in-plane epitaxial relationship was <100>BRB//<110>SrTiO3.

AB - Epitaxial growth of (Ba1-xRbx)BiO3-8 films was studied. Oxygen deficient atmosphere was appropriate for the epitaxial growth, while the effective oxidation by atomic oxygen during cooling down process was required in order to obtain d the as-grown superconductivity. Typical Tc, zero of the film was about 10K. The films had very smooth surface and the in-plane epitaxial relationship was <100>BRB//<110>SrTiO3.

UR - http://www.scopus.com/inward/record.url?scp=0026407009&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026407009&partnerID=8YFLogxK

U2 - 10.1016/0921-4534(91)91114-J

DO - 10.1016/0921-4534(91)91114-J

M3 - Article

AN - SCOPUS:0026407009

VL - 185-189

SP - 1979

EP - 1980

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

IS - PART 3

ER -